Memory system

ABSTRACT

A controller executes first processing for writing a plurality of data in a sector unit in the first storing area; second processing for flushing the data stored in the first storing area to the first input buffer in a first management unit twice or larger natural number times as large as the sector unit; third processing for flushing the data stored in the first storing area to the second input buffer in a second management unit twice or larger natural number times as large as the first management unit; fourth processing for relocating a logical block in which all pages are written in the first input buffer to the second storing area; fifth processing for relocating a logical block in which all pages are written in the second input buffer to the third storing area; and sixth processing for flushing a plurality of data stored in the second storing area to the second input buffer in the second management unit.

TECHNICAL FIELD

The present invention relates to a memory system including a nonvolatile semiconductor memory.

BACKGROUND ART

As an external storage device used in a computer system, an SSD (Solid State Drive) mounted with a nonvolatile semiconductor memory such as a NAND-type flash memory attracts attention. The flash memory has advantages such as high speed and light weight compared with a magnetic disk device.

The SSD includes a plurality of flash memory chips, a controller that performs read/write control for the respective flash memory chips in response to a request from a host apparatus, a buffer memory for performing data transfer between the respective flash memory chips and the host apparatus, a power supply circuit, and a connection interface to the host apparatus (e.g., Patent Document 1).

Examples of the nonvolatile semiconductor memory include nonvolatile semiconductor memories in which a unit of erasing, writing, and readout is fixed such as a nonvolatile semiconductor memory that, in storing data, once erases the data in block units and then performs writing and a nonvolatile semiconductor memory that performs writing and readout in page units in the same manner as the NAND-type flash memory.

On the other hand, a unit for a host apparatus such as a personal computer to write data in and read out the data from a secondary storage device such as a hard disk is called sector. The sector is set independently from a unit of erasing, writing, and readout of a semiconductor storage device.

For example, whereas a size of a block (a block size) of the nonvolatile semiconductor memory is 512 kB and a size of a page (a page size) thereof is 4 kB, a size of a sector (a sector size) of the host apparatus is set to 512 B.

In this way, the unit of erasing, writing, and readout of the nonvolatile semiconductor memory may be larger than the unit of writing and readout of the host apparatus.

Therefore, when the secondary storage device of the personal computer such as the hard disk is configured by using the nonvolatile semiconductor memory, it is necessary to write data with a small size from the personal computer as the host apparatus by adapting the size to the block size and the page size of the nonvolatile semiconductor memory.

The data recorded by the host apparatus such as the personal computer has both temporal locality and spatial locality (see, for example, Non-Patent Document 1). Therefore, when data is recorded, if the data is directly recorded in an address designated from the outside, rewriting, i.e., erasing processing temporally concentrates in a specific area and a bias in the number of times of erasing increases. Therefore, in the NAND-type flash memory, processing called wear leveling for equally distributing data update sections is performed.

In the wear leveling processing, for example, a logical address designated by the host apparatus is translated into a physical address of the nonvolatile semiconductor memory in which the data update sections are equally distributed.

An SSD configured to interpose a cache memory between a flash memory and a host apparatus and reduce the number of times of writing (the number of times of erasing) in the flash memory is disclosed (see, for example, Patent Document 2). When writing in the cache memory from the host apparatus is performed, if the cache memory is full, data is written in the cache memory after data is flushed from the cache memory to the flash memory.

As explained above, when a data erasing unit (a block) and a data management unit are different, according to the progress of rewriting of the flash memory, blocks are made porous by invalid (non-latest) data. When the blocks in such a porous state increases, substantially usable blocks decrease and a storage area of the flash memory cannot be effectively used. Therefore, processing called compaction for collecting valid latest data and rewriting the data in different blocks is performed (see, for example, Patent Document 3).

When the data flush from the cache memory to the flash memory is performed in this way, if the flash memory is in the porous state, it is conceivable to perform the data flush from the cache memory to the flash memory after performing the processing such as compaction to change the storage area of the flash memory to a satisfactory state. However, when the compaction processing or the like takes time, the data flush from the cache memory to the flash memory has to be put on wait. An effective method is demanded to solve this problem.

[Patent Document 1] Japanese Patent No. 3688835

[Patent Document 2] Published Japanese Translation of PCT patent application No. 2007-528079

[Patent Document 3] Japanese Patent Application Laid-Open No. 2005-222550

[Non-Patent Document 1] David A. Patterson and John L. Hennessy, “Computer Organization and Design: The Hardware/Software Interface”, Morgan Kaufmann Pub, 2004 Aug. 31

The present invention provides a memory system that can reduce processing time for data flush from a cache memory to a flash memory.

DISCLOSURE OF INVENTION

One aspect of this invention is to provide a memory system comprising a first storing area as a cache memory included in a volatile semiconductor memory; second and third storing areas included in nonvolatile semiconductor memories in which data reading and writing is performed by a page unit and data erasing is performed by a block unit twice or larger natural number times as large as the page unit; a first input buffer included in the nonvolatile semiconductor memories configured for buffering between the first storing area and the second storing area; a second input buffer included in the nonvolatile semiconductor memories configured for buffering between the first storing area and the third storing area; and a controller that allocates storage areas of the nonvolatile semiconductor memories to the second and third storing areas, and the first and second input buffers by a logical block unit associated with one or more blocks, wherein

-   -   the controller executes first processing for writing a plurality         of data in a sector unit in the first storing area; second         processing for flushing the data stored in the first storing         area to the first input buffer in a first management unit twice         or larger natural number times as large as the sector unit;         third processing for flushing the data stored in the first         storing area to the second input buffer in a second management         unit twice or larger natural number times as large as the first         management unit; fourth processing for relocating a logical         block in which all pages are written in the first input buffer         to the second storing area; fifth processing for relocating a         logical block in which all pages are written in the second input         buffer to the third storing area; and sixth processing for         flushing a plurality of data stored in the second storing area         to the second input buffer in the second management unit.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a block diagram of a configuration example of an SSD;

FIG. 2 is a diagram of a configuration example of one block included in a NAND memory chip and a threshold distribution in a quaternary data storage system;

FIG. 3 is a block diagram of a hardware internal configuration example of a drive control circuit;

FIG. 4 is a block diagram of a functional configuration example of a processor;

FIG. 5 is a block diagram of a functional configuration formed in a NAND memory and a DRAM;

FIG. 6 is a detailed functional block diagram related to write processing from a WC to the NAND memory;

FIG. 7 is a diagram of an LBA logical address;

FIG. 8 is a diagram of a configuration example of a management table in a data managing unit;

FIG. 9 is a diagram of an example of an RC cluster management table;

FIG. 10 is a diagram of an example of a WC cluster management table;

FIG. 11 is a diagram of an example of a WC track management table;

FIG. 12 is a diagram of an example of a track management table;

FIG. 13 is a diagram of an example of an FS/IS management table;

FIG. 14 is a diagram of an example of an MS logical block management table;

FIG. 15 is a diagram of an example of an FS/IS logical block management table;

FIG. 16 is a diagram of an example of an intra-FS/IS cluster management table;

FIG. 17 is a diagram of an example of a logical-to-physical translation table;

FIG. 18 is a flowchart of an operation example of read processing;

FIG. 19 is a flowchart of an operation example of write processing;

FIG. 20 is a diagram of combinations of inputs and outputs in a flow of data among components and causes of the flow;

FIG. 21 is a more detailed functional block diagram related to the write processing from the WC to the NAND memory;

FIG. 22 is a diagram of another configuration example of a management table in a data managing unit;

FIG. 23 is a diagram of a diagram of a relation among parallel operation elements, planes, and channels;

FIG. 24 is a diagram of another example of the logical-to-physical translation table;

FIG. 25 is a diagram of an example of a BB management table;

FIG. 26 is a diagram of an internal configuration example of an FB management table;

FIG. 27 is a diagram of a correspondence relation between logical blocks and physical blocks of the NAND memory;

FIG. 28 is a diagram of an example of an MS structure management table;

FIG. 29 is a diagram of an example of an FS/IS structure management table;

FIG. 30 is a detailed flowchart of an operation example of write processing; and

FIG. 31 is a flowchart of an example of an flush operation of an IS.

BEST MODE(S) FOR CARRYING OUT THE INVENTION

Best implementation modes of a memory system according to the present invention are explained in detail below with reference to the accompanying drawings.

EMBODIMENTS

Embodiments of the present invention are explained below with reference to the drawings. In the following explanation, components having the same functions and configurations are denoted by the same reference numerals and signs. Redundant explanation of the components is performed only when necessary.

First, terms used in this specification are defined.

Physical page: A unit that can be collectively written and read out in a NAND memory chip. A physical page size is, for example, 4 kB. However, a redundant bit such as an error correction code added to main data (user data, etc.) in an SSD is not included. Usually, 4 kB+redundant bit (e.g., several 10 B) is a unit simultaneously written in a memory cell. However, for convenience of explanation, the physical page is defined as explained above.

Logical page: A writing and readout unit set in the SSD. The logical page is associated with one or more physical pages. A logical page size is, for example, 4 kB in an 8-bit normal mode and is 32 kB in a 32-bit double speed mode. However, a redundant bit is not included.

Physical block: A minimum unit that can be independently erased in the NAND memory chip. The physical block includes a plurality of physical pages. A physical block size is, for example, 512 kB. However, a redundant bit such as an error correction code added to main data in the SSD is not included. Usually, 512 kB+redundant bit (e.g., several 10 kB) is a unit simultaneously erased. However, for convenience of explanation, the physical block is defined as explained above.

Logical block: An erasing unit set in the SSD. The logical block is associated with one or more physical blocks. A logical block size is, for example, 512 kB in an 8-bit normal mode and is 4 MB in a 32-bit double speed mode. However, a redundant bit is not included.

Sector: A minimum access unit from a host. A sector size is, for example, 512 B.

Cluster: A management unit for managing “small data (fine grained data)” in the SSD. For example, a cluster size is equal to or larger than the sector size and is set such that a size twice or larger natural number times as large as the cluster size is the logical page size.

Track: A management unit for managing “large data (coarse grained data)” in the SSD. For example, a track size is set such that a size twice or larger natural number times as large as the cluster size is the track size and a size twice or larger natural number times as large as the track size is the logical block size.

Free block (FB): A logical block on a NAND-type flash memory for which a use is not allocated. When a use is allocated to the free block, the free block is used after being erased.

Bad block (BB): A physical block on the NAND-type flash memory that cannot be used as a storage area because of a large number of errors. For example, a physical block for which an erasing operation is not normally finished is registered as the bad block BB.

Writing efficiency: A statistical value of an erasing amount of the logical block with respect to a data amount written from the host in a predetermined period. As the writing efficiency is smaller, a wear degree of the NAND-type flash memory is smaller.

Valid cluster: A cluster that stores latest data.

Invalid cluster: A cluster that stores non-latest data.

Valid track: A track that stores latest data.

Invalid track: A track that stores non-latest data.

Compaction: Extracting only the valid cluster and the valid track from a logical block in the management object and rewriting the valid cluster and the valid track in a new logical block.

First Embodiment

FIG. 1 is a block diagram of a configuration example of an SSD (Solid State Drive) 100. The SSD 100 is connected to a host apparatus 1 such as a personal computer or a CPU core via a memory connection interface such as an ATA interface (ATA I/F) 2 and functions as an external storage of the host apparatus 1. The SSD 100 can transmit data to and receive data from an apparatus for debagging and manufacture inspection 200 via a communication interface 3 such as an RS232C interface (RS232C I/F). The SSD 100 includes a NAND-type flash memory (hereinafter abbreviated as NAND memory) 10 as a nonvolatile semiconductor memory, a drive control circuit 4 as a controller, a DRAM 20 as a volatile semiconductor memory, a power supply circuit 5, an LED for state display 6, a temperature sensor 7 that detects the temperature in a drive, and a fuse 8.

The power supply circuit 5 generates a plurality of different internal DC power supply voltages from external DC power supplied from a power supply circuit on the host apparatus 1 side and supplies these internal DC power supply voltages to respective circuits in the SSD 100. The power supply circuit 5 detects a rising edge of an external power supply, generates a power-on reset signal, and supplies the power-on reset signal to the drive control circuit 4. The fuse 8 is provided between the power supply circuit on the host apparatus 1 side and the power supply circuit 5 in the SSD 100. When an overcurrent is supplied from an external power supply circuit, the fuse 8 is disconnected to prevent malfunction of the internal circuits.

In this case, the NAND memory 10 has four parallel operation elements 10 a to 10 d that perform four parallel operations. One parallel operation element has two NAND memory packages. Each of the NAND memory packages includes a plurality of stacked NAND memory chips (e.g., 1 chip=2 GB). In the case of FIG. 1, each of the NAND memory packages includes stacked four NAND memory chips. The NAND memory 10 has a capacity of 64 GB. When each of the NAND memory packages includes stacked eight NAND memory chips, the NAND memory 10 has a capacity of 128 GB.

The DRAM 20 functions as a cache for data transfer between the host apparatus 1 and the NAND memory 10 and a memory for a work area. An FeRAM can be used instead of the DRAM 20. The drive control circuit 4 performs data transfer control between the host apparatus 1 and the NAND memory 10 via the DRAM 20 and controls the respective components in the SSD 100. The drive control circuit 4 supplies a signal for status display to the LED for state display 6. The drive control circuit 4 also has a function of receiving a power-on reset signal from the power supply circuit 5 and supplying a reset signal and a clock signal to respective units in the own circuit and the SSD 100.

Each of the NAND memory chips is configured by arraying a plurality of physical blocks as units of data erasing. FIG. 2( a) is a circuit diagram of a configuration example of one physical block included in the NAND memory chip. Each physical block includes (p+1) NAND strings arrayed in order along an X direction (p is an integer equal to or larger than 0). A drain of a selection transistor ST1 included in each of the (p+1) NAND strings is connected to bit lines BL0 to BLp and a gate thereof is connected to a selection gate line SGD in common. A source of a selection transistor ST2 is connected to a source line SL in common and a gate thereof is connected to a selection gate line SGS in common.

Each of memory cell transistors MT includes a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) including the stacked gate structure formed on a semiconductor substrate. The stacked gate structure includes a charge storage layer (a floating gate electrode) formed on the semiconductor substrate via a gate insulating film and a control gate electrode formed on the charge storage layer via an inter-gate insulating film. Threshold voltage changes according to the number of electrons accumulated in the floating gate electrode. The memory cell transistor MT stores data according to a difference in the threshold voltage. The memory cell transistor MT can be configured to store one bit or can be configured to store multiple values (data equal to or larger than two bits).

The memory cell transistor MT is not limited to the structure having the floating gate electrode and can be the structure such as a MONOS (Metal-Oxide-Nitride-Oxide-Silicon) type that can adjust a threshold by causing a nitride film interface as a charge storage layer to trap electrons. Similarly, the memory cell transistor MT of the MONOS structure can be configured to store one bit or can be configured to store multiple values (data equal to or larger than two bits).

In each of the NAND strings, (q+1) memory cell transistors MT are arranged between the source of the selection transistor ST1 and the drain of the selection transistor ST2 such that current paths thereof are connected in series. In other words, the memory cell transistors MT are connected in series in a Y direction such that adjacent ones of the memory cell transistors MT share a diffusion region (a source region or a drain region).

Control gate electrodes of the memory cell transistors MT are connected to word lines WL0 to WLq, respectively, in order from the memory cell transistor MT located on the most drain side. Therefore, a drain of the memory cell transistor MT connected to the word line WL0 is connected to the source of the selection transistor ST1. A source of the memory cell transistor MT connected to the word line WLq is connected to the drain of the selection transistor ST2.

The word lines WL0 to WLq connect the control gate electrodes of the memory cell transistors MT in common among the NAND strings in the physical block. In other words, the control gates of the memory cell transistors MT present in an identical row in the block are connected to an identical word line WL. (p+1) memory cell transistors MT connected to the identical word line WL is treated as one page (physical page). Data writing and data readout are performed by each physical page.

The bit lines BL0 to BLp connect drains of selection transistors ST1 in common among the blocks. In other words, the NAND strings present in an identical column in a plurality of blocks are connected to an identical bit line BL.

FIG. 2( b) is a schematic diagram of a threshold distribution, for example, in a quaternary data storage mode for storing two bits in one memory cell transistor MT. In the quaternary data storage mode, any one of quaternary data “xy” defined by upper page data “x” and lower page data “y” can be stored in the memory cell transistor MT.

As the quaternary data “xy”, for example, “11”, “01”, “00”, and “10” are allocated in order of threshold voltages of the memory cell transistor MT. The data “11” is an erased state in which the threshold voltage of the memory cell transistor MT is negative.

In a lower page writing operation, the data “10” is selectively written in the memory cell transistor MT having the data “11” (in the erased state) according to the writing of the lower bit data “y”. A threshold distribution of the data “10” before upper page writing is located about in the middle of threshold distributions of the data “01” and the data “00” after the upper page writing and can be broader than a threshold distribution after the upper page writing. In a upper page writing operation, writing of upper bit data “x” is selectively applied to a memory cell of the data “11” and a memory cell of the data “10”. The data “01” and the data “00” are written in the memory cells.

FIG. 3 is a block diagram of a hardware internal configuration example of the drive control circuit 4. The drive control circuit 4 includes a data access bus 101, a first circuit control bus 102, and a second circuit control bus 103. A processor 104 that controls the entire drive control circuit 4 is connected to the first circuit control bus 102. A boot ROM 105, in which a boot program for booting respective management programs (FW: firmware) stored in the NAND memory 10 is stored, is connected to the first circuit control bus 102 via a ROM controller 106. A clock controller 107 that receives the power-on rest signal from the power supply circuit 5 shown in FIG. 1 and supplies a reset signal and a clock signal to the respective units is connected to the first circuit control bus 102.

The second circuit control bus 103 is connected to the first circuit control bus 102. An I²C circuit 108 for receiving data from the temperature sensor 7 shown in FIG. 1, a parallel IO (PIO) circuit 109 that supplies a signal for status display to the LED for state display 6, and a serial IO (SIO) circuit 110 that controls the RS232C I/F 3 are connected to the second circuit control bus 103.

An ATA interface controller (ATA controller) 111, a first ECC (Error Checking and Correction) circuit 112, a NAND controller 113, and a DRAM controller 114 are connected to both the data access bus 101 and the first circuit control bus 102. The ATA controller 111 transmits data to and receives data from the host apparatus 1 via the ATA interface 2. An SRAM 115 used as a data work area and a firm ware expansion area is connected to the data access bus 101 via an SRAM controller 116. When the firmware stored in the NAND memory 10 is started, the firmware is transferred to the SRAM 115 by the boot program stored in the boot ROM 105.

The NAND controller 113 includes a NAND I/F 117 that performs interface processing for interface with the NAND memory 10, a second ECC circuit 118, and a DMA controller for DMA transfer control 119 that performs access control between the NAND memory 10 and the DRAM 20. The second ECC circuit 118 performs encode of a second correction code and performs encode and decode of a first error correction code. The first ECC circuit 112 performs decode of a second error correction code. The first error correction code and the second error correction code are, for example, a hamming code, a BCH (Bose Chaudhuri Hocqenghem) code, an RS (Reed Solomon) code, or an LDPC (Low Density Parity Check) code. Correction ability of the second error correction code is higher than correction ability of the first error correction code.

As shown in FIGS. 1 and 3, in the NAND memory 10, the four parallel operation elements 10 a to 10 d are connected in parallel to the NAND controller 112 in the drive control circuit 4 via four eight-bit channels (4 ch). Three kinds of access modes explained below are provided according to a combination of whether the four parallel operation elements 10 a to 10 d are independently actuated or actuated in parallel and whether a double speed mode (Multi Page Program/Multi Page Read/Multi Block Erase) provided in the NAND memory chip is used.

(1) 8-Bit Normal Mode

An 8-bit normal mode is a mode for actuating only one channel and performing data transfer in 8-bit units. Writing and readout are performed in the physical page size (4 kB). Erasing is performed in the physical block size (512 kB). One logical block is associated with one physical block and a logical block size is 512 kB.

(2) 32-Bit Normal Mode

A 32-bit normal mode is a mode for actuating four channels in parallel and performing data transfer in 32-bit units. Writing and readout are performed in the physical page size×4 (16 kB). Erasing is performed in the physical block size×4 (2 MB). One logical block is associated with four physical blocks and a logical block size is 2 MB.

(3) 32-Bit Double Speed Mode

A 32-bit double speed mode is a mode for actuating four channels in parallel and performing writing and readout using a double speed mode of the NAND memory chip. Writing and readout are performed in the physical page size×4×2 (32 kB). Erasing is performed in the physical block size×4×2 (4 MB). One logical block is associated with eight physical blocks and a logical block size is 4 MB.

In the 32-bit normal mode or the 32-bit double speed mode for actuating four channels in parallel, four or eight physical blocks operating in parallel are erasing units for the NAND memory 10 and four or eight physical pages operating in parallel are writing units and readout units for the NAND memory 10. In operations explained below, basically, the 32-bit double speed mode is used. For example, it is assumed that one logical block=4 MB=2^(i) tracks=2^(j) pages=2^(k) clusters=2^(l) sectors (i, j, k, and l are natural numbers and a relation of i≦j≦k<1 holds).

A logical block accessed in the 32-bit double speed mode is accessed in 4 MB units. Eight (2×4ch) physical blocks (one physical block=512 kB) are associated with the logical block. When the bad block BB managed in physical block units is detected, the bad block BB is unusable. Therefore, in such a case, a combination of the eight physical blocks associated with the logical block is changed to not include the bad block BB.

FIG. 4 is a block diagram of a functional configuration example of firmware realized by the processor 104. Functions of the firmware realized by the processor 104 are roughly classified into a data managing unit 120, an ATA-command processing unit 121, a security managing unit 122, a boot loader 123, an initialization managing unit 124, and a debag supporting unit 125.

The data managing unit 120 controls data transfer between the NAND memory 10 and the DRAM 20 and various functions concerning the NAND memory 10 via the NAND controller 112 and the first ECC circuit 114. The ATA-command processing unit 121 performs data transfer processing between the DRAM 20 and the host apparatus 1 in cooperation with the data managing unit 120 via the ATA controller 110 and the DRAM controller 113. The security managing unit 122 manages various kinds of security information in cooperation with the data managing unit 120 and the ATA-command processing unit 121.

The boot loader 123 loads, when a power supply is turned on, the management programs (firmware) from the NAND memory 10 to the SRAM 120. The initialization managing unit 124 performs initialization of respective controllers and circuits in the drive control circuit 4. The debag supporting unit 125 processes data for debag supplied from the outside via the RS232C interface. The data managing unit 120, the ATA-command processing unit 121, and the security managing unit 122 are mainly functional units realized by the processor 104 executing the management programs stored in the SRAM 114.

In this embodiment, functions realized by the data managing unit 120 are mainly explained. The data managing unit 120 performs, for example, provision of functions that the ATA-command processing unit 121 requests the NAND memory 10 and the DRAM 20 as storage devices to provide (in response to various commands such as a Write request, a Cache Flush request, and a Read request from the host apparatus), management of a correspondence relation between an address region and the NAND memory 10 and protection of management information, provision of fast and highly efficient data readout and writing functions using the DRAM 20 and the NAND 10, ensuring of reliability of the NAND memory 10.

FIG. 5 is a diagram of functional blocks formed in the NAND memory 10 and the DRAM 20. A write cache (WC) 21 and a read cache (RC) 22 configured on the DRAM 20 are interposed between the host 1 and the NAND memory 10. The WC 21 temporarily stores Write data from the host apparatus 1. The RC 22 temporarily stores Read data from the NAND memory 10. The logical blocks in the NAND memory 10 are allocated to respective management areas of a pre-stage storage area (FS: Front Storage) 12, an intermediate stage storage area (IS: Intermediate Storage) 13, and a main storage area (MS: Main Storage) 11 by the data managing unit 120 in order to reduce an amount of erasing for the NAND memory 10 during writing. The FS 12 manages data from the WC 21 in cluster units, i.e., “small units” and stores small data for a short period. The IS 13 manages data overflowing from the FS 12 in cluster units, i.e., “small units” and stores small data for a long period. The MS 11 stores data from the WC 21, the FS 12, and the IS 13 in track units, i.e., “large units” for a long period. For example, storage capacities are in a relation of MS>IS and FS>WC.

When the small management unit is applied to all the storage areas of the NAND memory 10, a size of a management table explained later is enlarged and does not fit in the DRAM 20. Therefore, the respective storages of the NAND memory 10 are configured to manage, in small management units, only data just written recently and small data with low efficiency of writing in the NAND memory 10.

FIG. 6 is a more detailed functional block diagram related to write processing (WR processing) from the WC 21 to the NAND memory 10. An FS input buffer (FSIB) 12 a that buffers data from the WC 21 is provided at a pre-stage of the FS 12. An MS input buffer (MSIB) 11 a that buffers data from the WC 21, the FS 12, or the IS 13 is provided at a pre-stage of the MS 11. A track pre-stage storage area (TFS) 11 b is provided in the MS 11. The TFS 11 b is a buffer that has the FIFO (First in First out) structure interposed between the MSIB 11 a and the MS 11. Data recorded in the TFS 11 b is data with an update frequency higher than that of data directly written in the MS 11 from the MSIB 11 a. Any of the logical blocks in the NAND memory 10 is allocated to the MS 11, the MSIB 11 a, the TFS 11 b, the FS 12, the FSIB 12 a, and the IS 13.

Specific functional configurations of the respective components shown in FIGS. 5 and 6 are explained in detail. When the host apparatus 1 performs Read or Write for the SSD 100, the host apparatus 1 inputs LBA (Logical Block Addressing) as a logical address via the ATA interface. As shown in FIG. 7, the LBA is a logical address in which serial numbers from 0 are attached to sectors (size: 512 B). In this embodiment, as management units for the WC 21, the RC 22, the FS 12, the IS 13, and the MS 11, which are the components shown in FIG. 5, a logical cluster address formed of a bit string equal to or higher in order than a low-order (l−k+1)th bit of the LBA and a logical track address formed of bit strings equal to or higher in order than a low-order (l−i+1)th bit of the LBA are defined. One cluster=2^((l−k)) sectors and one track=2^((k−i)) clusters.

Read Cache (RC) 22

The RC 22 is explained. The RC 22 is an area for temporarily storing, in response to a Read request from the ATA-command processing unit 121, Read data from the NAND memory 10 (the FS 12, the IS 13, and the MS 11). In this embodiment, the RC 22 is managed in, for example, an m-line/n-way (m is a natural number equal to or larger than 2^((k−i)) and n is a natural number equal to or larger than 2) set associative system and can store data for one cluster in one entry. A line is determined by LSB (k−i) bits of the logical cluster address. The RC 22 can be managed in a full-associative system or can be managed in a simple FIFO system.

Write Cache (WC) 21

The WC 21 is explained. The WC 21 is an area for temporarily storing, in response to a Write request from the ATA-command processing unit 121, Write data from the host apparatus 1. The WC 21 is managed in the m-line/n-way (m is a natural number equal to or larger than 2^((k−i)) and n is a natural number equal to or larger than 2) set associative system and can store data for one cluster in one entry. A line is determined by LSB (k−i) bits of the logical cluster address. For example, a writable way is searched in order from a way 1 to a way n. Tracks registered in the WC 21 are managed in LRU (Least Recently Used) by the FIFO structure of a WC track management table 24 explained later such that the order of earliest update is known. The WC 21 can be managed by the full-associative system. The WC 21 can be different from the RC 22 in the number of lines and the number of ways.

Data written according to the Write request is once stored on the WC 21. A method of determining data to be flushed from the WC 21 to the NAND 10 complies with rules explained below.

(i) When a writable way in a line determined by a tag is a last (in this embodiment, nth) free way, i.e., when the last free way is used, a track updated earliest based on an LRU among tracks registered in the line is decided to be flushed.

(ii) When the number of different tracks registered in the WC 21 exceeds a predetermined number, tracks with the numbers of clusters smaller than the predetermined number in a WC are decided to be flushed in order of LRUs.

Tracks to be flushed are determined according to the policies explained above. In flushing the tracks, all data included in an identical track is flushed. When an amount of data to be flushed exceeds, for example, 50% of a track size, the data is flushed to the MS 11. When an amount of data to be flushed does not exceed, for example, 50% of a track size, the data is flushed to the FS 12.

When track flush is performed under the condition (i) and the data is flushed to the MS 11, a track satisfying a condition that an amount of data to be flushed exceeds 50% of a track size among the tracks in the WC 21 is selected and added to flush candidates according to the policy (i) until the number of tracks to be flushed reach 2^(i) (when the number of tracks is equal to or larger than 2^(i) from the beginning, until the number of tracks reaches 2^(i+1)). In other words, when the number of tracks to be flushed is smaller than 2^(i), tracks having valid clusters more than 2^((k−i−1)) are selected in order from the oldest track in the WC and added to the flush candidates until the number of tracks reaches 2^(i).

When track flush is performed under the condition (i) and the track is flushed to the FS 12, a track satisfying the condition that an amount of data to be flushed does not exceed 50% of a track size is selected in order of LRUs among the tracks in the WC 21 and clusters of the track are added to the flush candidates until the number of clusters to be flushed reaches 2^(k). In other words, clusters are extracted from tracks having 2^((k−i−1)) or less valid clusters by tracing the tracks in the WC in order from the oldest one and, when the number of valid clusters reaches 2^(k), the clusters are flushed to the FSIB 12 a in logical block units. However, when 2^(k) valid clusters are not found, clusters are flushed to the FSIB 12 a in logical page units. A threshold of the number of valid clusters for determining whether the flush to the FS 12 is performed in logical block units or logical page units is not limited to a value for one logical block, i.e., 2^(k) and can be a value slightly smaller than the value for one logical block.

In a Cache Flush request from the ATA-command processing unit 121, all contents of the WC 21 are flushed to the FS 12 or the MS 11 under conditions same as the above (when an amount of data to be flushed exceeds 50% of a track size, the data is flushed to the MS 11 and, when the amount of data does not exceed 50%, the data is flushed to the FS 12).

Pre-Stage Storage Area (FS) 12

The FS 12 is explained. The FS 12 adapts an FIFO structure of logical block units in which data is managed in cluster units. The FS 12 is a buffer for regarding that data passing through the FS 12 has an update frequency higher than that of the IS 13 at the post stage. In other words, in the FIFO structure of the FS 12, a valid cluster (a latest cluster) passing through the FIFO is invalidated when rewriting in the same address from the host is performed. Therefore, the cluster passing through the FS 12 can be regarded as having an update frequency higher than that of a cluster flushed from the FS 12 to the IS 13 or the MS 11.

By providing the FS 12, likelihood of mixing of data with a high update frequency in compaction processing in the IS 13 at the post stage is reduced. When the number of valid clusters of a logical block that stores old clusters is reduced to 0 by the invalidation, the logical block is released and allocated to the free block FB. When the logical block is invalidated, a new free block FB is acquired and allocated to the FS 12.

When movement of cluster data from the WC 21 to the FS 12 is performed, the cluster is written in a logical block allocated to the FSIB 12 a. When blocks, for which writing of all pages is completed, are present in the FSIB 12 a, the blocks are moved from the FSIB 12 a to the FS 12 by CIB processing explained later. In moving the blocks from the FSIB 12 a to the FS 12, when the number of blocks of the FS 12 exceeds a predetermined upper limit value allowed for the FS 12, an oldest block is flushed from the FS 12 to the IS 13 or the MS 11. For example, a track with a ratio of valid clusters in the track equal to or larger than 50% is written in the MS 11 (the TFS 11 b) and a block in which the valid cluster remain is moved to the IS 13.

As the data movement between components in the NAND memory 10, there are two ways, i.e., Move and Copy. Move is a method of simply performing relocation of a pointer of a management table explained later and not performing actual rewriting of data. Copy is a method of actually rewriting data stored in one component to the other component in page units, track units, or block units.

Intermediate Stage Storage Area (IS) 13

The IS 13 is explained. In the IS 13, management of data is performed in cluster units in the same manner as the FS 12. Data stored in the IS 13 can be regarded as data with a low update frequency. When movement (Move) of a logical block from the FS 12 to the IS 13, i.e., flush of the logical block from the FS 12 is performed, a logical block as an flush object, which is previously a management object of the FS 12, is changed to a management object block of the IS 13 by the relocation of the pointer. According to the movement of the logical block from the FS 12 to the IS 13, when the number of blocks of the IS 13 exceeds a predetermined upper limit value allowed for the IS 13, i.e., when the number of writable free blocks FB in the IS decreases to be smaller than a threshold, data flush from the IS 13 to the MS 11 and compaction processing are executed. The number of blocks of the IS 13 is returned to a specified value.

The IS 13 executes flush processing and compaction processing explained below using the number of valid clusters in a track.

Tracks are sorted in order of the number of valid clusters×valid cluster coefficient (the number weighted according to whether a track is present in a logical block in which an invalid track is present in the MS 11; the number is larger when the invalid track is present than when the invalid track is not present). 2^(i+1) tracks (for two logical blocks) with a large value of a product are collected, increased to be natural number times as large as a logical block size, and flushed to the MSIB 11 a.

When a total number of valid clusters of two logical blocks with a smallest number of valid clusters is, for example, equal to or larger than 2^(k) (for one logical black), which is a predetermined set value, the step explained above is repeated (to perform the step until a free block FB can be created from two logical blocks in the IS).

2^(k) clusters are collected in order from logical blocks with a smallest number of valid clusters and compaction is performed in the IS.

Here, the two logical blocks with the smallest number of valid clusters are selected. However, the number is not limited to two and only has to be a number equal to or larger than two. The predetermined set value only has to be equal to or smaller than the number of clusters that can be stored in the number of logical blocks smaller than the number of selected logical blocks by one.

Main Storage Area (MS) 11

The MS 11 is explained. In the MS 11, management of data is performed in track units. Data stored in the MS 11 can be regarded as having a low update frequency. When Copy or Move of track data from the WC 21, the FS 12, or the IS 13 to the MS 11 is performed, the track is written in a logical block allocated to the MSIB 11 a. On the other hand, when only data (clusters) in a part of the track is written from a WC or the like, passive merge explained later for merging track data in an existing MS and new data to create new track data and, then, writing the created track data in the MSIB 11 a is performed. When invalid tracks are accumulated in the MS 11 and the number of logical blocks allocated to the MS 11 exceeds the upper limit of the number of blocks allowed for the MS 11, compaction processing is performed to create an invalid free block FB.

As the compaction processing of the MS 11, for example, a method explained below with attention paid to only the number of valid tracks in a logical block is carried out.

Logical blocks are selected from one with a smallest number of valid tracks until an invalid free block FB can be created by combining invalid tracks.

Compaction is executed while passive merge for integrating tracks stored in the selected logical blocks with data in the WC 21, the FS 12, or the IS 13 is performed.

A logical block in which 2^(i) tracks can be integrated is output to the TFS 11 b (2¹ track MS compaction) and tracks smaller in number than 2^(i) are output to the MSIB 11 a (less than 2^(i) track compaction) to create a larger number of invalid free blocks FB.

The TFS 11 b is an FIFO in which data is managed in track units. The TFS 11 b is a buffer for regarding that data passing through the TFS 11 b has an update frequency higher than that of the MS 11 at the post stage. In other words, in the FIFO structure of the TFS 11 b, a valid track (a latest track) passing through the FIFO is invalidated when rewriting in the same address from the host is performed. Therefore, a track passing through the TFS 11 b can be regarded as having an update frequency higher than that of a track flushed from the TFS 11 b to the MS 11.

FIG. 8 is a diagram of a management table for the data managing unit 120 to control and manage the respective components shown in FIGS. 5 and 6. The data managing unit 120 has, as explained above, the function of bridging the ATA-command processing unit 121 and the NAND memory 10 and includes a DRAM-layer managing unit 120 a that performs management of data stored in the DRAM 20, a logical-NAND-layer managing unit 120 b that performs management of data stored in the NAND memory 10, and a physical-NAND-layer managing unit 120 c that manages the NAND memory 10 as a physical storage device. An RC cluster management table 23, a WC track management table 24, and a WC cluster management table 25 are controlled by the DRAM-layer managing unit 120 a. A track management table 30, an FS/IS management table 40, an MS logical block management table 35, an FS/IS logical block management table 42, and an intra-FS/IS cluster management table 44 are managed by the logical-NAND-layer managing unit 120 b. A logical-to-physical translation table 50 is managed by the physical-NAND-layer managing unit 120 c.

The RC 22 is managed by the RC cluster management table 23, which is a reverse lookup table. In the reverse lookup table, from a position of a storage device, a logical address stored in the position can be searched.

The WC 21 is managed by the WC cluster management table 25, which is a reverse lookup table, and the WC track management table 24, which is a forward lookup table. In the forward lookup table, from a logical address, a position of a storage device in which data corresponding to the logical address is present can be searched.

Logical addresses of the FS 12 (the FSIB 12 a), the IS 13, and the MS 11 (the TFS 11 b and the MSIB 11 a) in the NAND memory 10 are managed by the track management table 30, the FS/IS management table 40, the MS logical block management table 35, the FS/IS logical block management table 42, and the intra-FS/IS cluster management table 44. In the FS 12 (the FSIB 12 a), the IS 13, and the MS 11 (the TFS 11 b and MSIB 11 a) in the NAND memory 10, conversion of a logical address and a physical address is performed of the logical-to-physical translation table 50. These management tables are stored in an area on the NAND memory 10 and read onto the DRAM 20 from the NAND memory and used during initialization of the SSD 100.

RC Cluster Management Table 23 (Reverse Lookup)

The RC cluster management table 23 is explained with reference to FIG. 9. As explained above, the RC 22 is managed in the n-way set associative system indexed by logical cluster address LSB (k−i) bits. The RC cluster management table 23 is a table for managing tags of respective entries of the RC (the cluster size×m-line×n-way) 22. Each of the tags includes a state flag 23 a including a plurality of bits and a logical track address 23 b. The state flag 23 a includes, besides a Valid bit indicating whether the entry may be used (valid/invalid), for example, a bit indicating whether the entry is on a wait for readout from the NAND memory 10 and a bit indicating whether the entry is on a wait for readout to the ATA-command processing unit 121. The RC cluster management table 23 functions as a reverse lookup table for searching for a logical track address coinciding with LBA from a tag storage position on the DRAM 20.

WC Cluster Management Table 25 (Reverse Lookup)

The WC cluster management table 25 is explained with reference to FIG. 10. As explained above, the WC 21 is managed in the n-way set associative system indexed by logical cluster address LSB (k−i) bits. The WC cluster management table 25 is a table for managing tags of respective entries of the WC (the cluster size×m-line×n-way) 21. Each of the tags includes a state flag 25 a of a plurality of bits, a sector position bitmap 25 b, and a logical track address 25 c.

The state flag 25 a includes, besides a Valid bit indicating whether the entry may be used (valid/invalid), for example, a bit indicating whether the entry is on a wait for flush to the NAND memory 10 and a bit indicating whether the entry is on a wait for writing from the ATA-command processing unit 121. The sector position bitmap 25 b indicates which of 2^((l−k)) sectors included in one cluster stores valid data by expanding the sectors into 2^((l−k)) bits. With the sector position bitmap 25 b, management in sector units same as the LBA can be performed in the WC 21. The WC cluster management table 25 functions as a reverse lookup table for searching for a logical track address coinciding with the LBA from a tag storage position on the DRAM 20.

WC Track Management Table 24 (Forward Lookup)

The WC track management table 24 is explained with reference to FIG. 11. The WC track management table 24 is a table for managing information in which clusters stored on the WC 21 are collected in track units and represents the order (LRU) of registration in the WC 21 among the tracks using the linked list structure having an FIFO-like function. The LRU can be represented by the order updated last in the WC 21. An entry of each list includes a logical track address 24 a, the number of valid clusters 24 b in the WC 21 included in the logical track address, a way-line bitmap 24 c, and a next pointer 24 d indicating a pointer to the next entry. The WC track management table 24 functions as a forward lookup table because required information is obtained from the logical track address 24 a.

The way-line bitmap 24 c is map information indicating in which of m×n entries in the WC 21 a valid cluster included in the logical track address in the WC 21 is stored. The Valid bit is “1” in an entry in which the valid cluster is stored. The way-line bitmap 24 c includes, for example, (one bit (Valid)+log₂n bits (n-way))×m bits (m-line). The WC track management table 24 has the linked list structure. Only information concerning the logical track address present in the WC 21 is entered.

Track Management Table 30 (Forward Lookup)

The track management table 30 is explained with reference to FIG. 12. The track management table 30 is a table for managing a logical data position on the MS 11 in logical track address units. When data is stored in the FS 12 or the IS 13 in cluster units, the track management table 30 stores basic information concerning the data and a pointer to detailed information. The track management table 30 is configured in an array format having a logical track address 30 a as an index. Each entry having the logical track address 30 a as an index includes information such as a cluster bitmap 30 b, a logical block ID 30 c+an intra-logical block track position 30 d, a cluster table pointer 30 e, the number of FS clusters 30 f, and the number of IS clusters 30 g. The track management table 30 functions as a forward lookup table because, using a logical track address as an index, required information such as a logical block ID (corresponding to a storage device position) in which a logical track corresponding to the logical track address is stored.

The cluster bitmap 30 b is a bitmap obtained by dividing 2^((k−i)) clusters belonging to one logical track address range into, for example, eight in ascending order of cluster addresses. Each of eight bits indicates whether clusters corresponding to 2^((k−i−3)) cluster addresses are present in the MS 11 or present in the FS 12 or the IS 13. When the bit is “0”, this indicates that the clusters as search objects are surely present in the MS 11. When the bit is “1”, this indicates that the clusters are likely to be present in the FS 12 or the IS 13.

The logical block ID 30 c is information for identifying a logical block ID in which a logical track corresponding to the logical track address is stored. The intra-logical block track position 30 d indicates a storage position of a track corresponding to the logical track address (30 a) in the logical block designated by the logical block ID 30 c. Because one logical block includes maximum 2^(i) valid tracks, the intra-logical block track position 30 d identifies 2^(i) track positions using i bits.

The cluster table pointer 30 e is a pointer to a top entry of each list of the FS/IS management table 40 having the linked list structure. In the search through the cluster bitmap 30 b, when it is indicated that the cluster is likely to be present in the FS 12 or the IS 13, search through the FS/IS management table 40 is executed by using the cluster table pointer 30 e. The number of FS clusters 30 f indicates the number of valid clusters present in the FS 12. The number of IS clusters 30 g indicates the number of valid clusters present in the IS 13.

FS/IS Management Table 40 (Forward Lookup)

The FS/IS management table 40 is explained with reference to FIG. 13. The FS/IS management table 40 is a table for managing a position of data stored in the FS 12 (including the FSIB 12 a) or the IS 13 in logical cluster units. As shown in FIG. 13, the FS/IS management table 40 is formed in an independent linked list format for each logical track address. As explained above, a pointer to a top entry of each list is stored in a field of the cluster table pointer 30 e of the track management table 30. In FIG. 13, linked lists for two logical track addresses are shown. Each entry includes a logical cluster address 40 a, a logical block ID 40 b, an intra-logical block cluster position 40 c, an FS/IS block ID 40 d, and a next pointer 40 e. The FS/IS management table 40 functions as a forward lookup table because required information such as the logical block ID 40 b and the intra-logical block cluster position 40 c (corresponding to a storage device position) in which a logical cluster corresponding to the logical cluster address 40 a is stored is obtained from the logical cluster address 40 a.

The logical block ID 40 b is information for identifying a logical block ID in which a logical cluster corresponding to the logical cluster address 40 a is stored. The intra-logical block luster position 40 c indicates a storage position of a cluster corresponding to the logical luster address 40 a in a logical block designated by the logical block ID 40 b. Because one logical block includes maximum 2^(k) valid clusters, the intra-logical block cluster position 40 c identifies 2^(k) positions using k bits. An FS/IS block ID, which is an index of the FS/IS logical block management table 42 explained later, is registered in the FS/IS block ID 40 d. The FS/IS block ID is information for identifying a logical block belonging to the FS 12 or the IS 13. The FS/IS block ID 40 d in the FS/IS management table 40 is registered for link to the FS/IS logical block management table 42 explained later. The next pointer 40 e indicates a pointer to the next entry in the same list linked for each logical track address.

MS Logical Block Management Table 35 (Reverse Lookup)

The MS logical block management table 35 is explained with reference to FIG. 14. The MS logical block management table 35 is a table for unitarily managing information concerning a logical block used in the MS 11 (e.g., which logical track is stored and whether a logical track is additionally recordable). In the MS logical block management table 35, information concerning logical blocks belonging to the FS 12 (including the FSIB 12) and the IS 13 is also registered. The MS logical block management table 35 is formed in an array format having a logical block ID 35 a as an index. The number of entries can be 32 K entries at the maximum in the case of the 128 GB NAND memory 10. Each of the entries includes a track management pointer 35 b for 2^(i) tracks, the number of valid tracks 35 c, a writable top track 35 d, and a Valid flag 35 e. The MS logical block management table 35 functions as a reverse lookup table because required information such as a logical track address stored in the logical block is obtained from the logical block ID 35 a corresponding to a storage device position.

The track management pointer 35 b stores a logical track address corresponding to each of 2^(i) track positions in the logical block designated by the logical block ID 35 a. It is possible to search through the track management table 30 having the logical track address as an index using the logical track address. The number of valid tracks 35 c indicates the number of valid tracks (maximum 2^(i)) among tracks stored in the logical block designated by the logical block ID 35 a. The writable top track position 35 d indicates a top position (0 to 2^(i−1), 2^(i) when additional recording is finished) additionally recordable when the logical block designated by the logical block ID 35 a is a block being additionally recorded. The Valid flag 35 e is “1” when the logical block entry is managed as the MS 11 (including the MSIB 11 a).

FS/IS Logical Block Management Table 42 (Reverse Lookup)

The FS/IS logical block management table 42 is explained with reference to FIG. 15. The FS/IS logical block management table 42 is formed in an array format having an FS/IS block ID 42 a as an index. The FS/IS logical block management table 42 is a table for managing information concerning a logical block used as the FS 12 or the IS 13 (correspondence to a logical block ID, an index to the intra-FS/IS cluster management table 44, whether the logical block is additionally recordable, etc.). The FS/IS logical block management table 42 is accessed by mainly using the FS/IS block ID 40 d in the FS/IS management table 40. Each entry includes a logical block ID 42 b, an intra-block cluster table 42 c, the number of valid clusters 42 d, a writable top page 42 e, and a Valid flag 42 f. The MS logical block management table 35 functions as a reverse lookup table because required information such as a logical cluster stored in the logical block is obtained from the FS/IS block ID 42 corresponding to a storage device position.

Logical block IDs corresponding to logical blocks belonging to the FS 12 (including the FSIB 12) and the IS 13 among logical blocks registered in the MS logical block management table 35 are registered in the logical block ID 42 b. An index to the intra-FS/IS cluster management table 44 explained later indicating a logical cluster designated by which logical cluster address is registered in each cluster position in a logical block is registered in the intra-block cluster table 42 c. The number of valid clusters 42 d indicates the number of (maximum 2^(k)) valid clusters among clusters stored in the logical block designated by the FS/IS block ID 42 a. The writable top page position 42 e indicates a top page position (0 to 2^(j−l), 2^(i) when additional recording is finished) additionally recordable when the logical block designated by the FS/IS block ID 42 a is a block being additionally recorded. The Valid flag 42 f is “1” when the logical block entry is managed as the FS 12 (including the FSIB 12) or the IS 13.

Intra-FS/IS Cluster Management Table 44 (Reverse Lookup)

The intra-FS/IS cluster management table 44 is explained with reference to FIG. 16. The intra-FS/IS cluster management table 44 is a table indicating which logical cluster is recorded in each cluster position in a logical block used as the FS 12 or the IS 13. The intra-FS/IS cluster management table 44 has 2^(j) pages×2^((k−j)) clusters=2^(k) entries per one logical block. Information corresponding to 0th to 2^(k)1th cluster positions among cluster positions in the logical block is arranged in continuous areas. Tables including the 2^(k) pieces of information are stored by the number equivalent to the number of logical blocks (P) belonging to the FS 12 and the IS 13. The intra-block cluster table 42 c of the FS/IS logical block management table 42 is positional information (a pointer) for the P tables. A position of each entry 44 a arranged in the continuous areas indicates a cluster position in one logical block. As content of the entry 44 a, a pointer to a list including a logical cluster address managed by the FS/IS management table 40 is registered such that it is possible to identify which logical cluster is stored in the cluster position. In other words, the entry 44 a does not indicate the top of a linked list. A pointer to one list including the logical cluster address in the linked list is registered in the entry 44 a.

Logical-to-Physical Translation Table 50 (Forward Lookup)

The logical-to-physical translation table 50 is explained with reference to FIG. 17. The logical-to-physical translation table 50 is formed in an array format having a logical block ID 50 a as an index. The number of entries can be maximum 32 K entries in the case of the 128 GB NAND memory 10. The logical-to-physical translation table 50 is a table for managing information concerning conversion between a logical block ID and a physical block ID and the life. Each of the entries includes a physical block address 50 b, the number of times of erasing 50 c, and the number of times of readout 50 d. The logical-to-physical translation table 50 functions as a forward lookup table because required information such as a physical block ID (a physical block address) is obtained from a logical block ID.

The physical block address 50 b indicates eight physical block IDs (physical block addresses) belonging to one logical block ID 50 a. The number of times of erasing 50 c indicates the number of times of erasing of the logical block ID. A bad block (BB) is managed in physical block (512 KB) units. However, the number of times of erasing is managed in one logical block (4 MB) units in the 32-bit double speed mode. The number of times of readout 50 d indicates the number of times of readout of the logical block ID. The number of times of erasing 50 c can be used in, for example, wear leveling processing for leveling the number of times of rewriting of a NAND-type flash memory. The number of times of readout 50 d can be used in refresh processing for rewriting data stored in a physical block having deteriorated retention properties.

The management tables shown in FIG. 8 are collated by management object as explained below.

RC management: The RC cluster management table

WC management: The WC cluster management table and the WC track management table

MS management: The track management table 30 and the

MS logical block management table 35

FS/IS management: The track management table 30, the FS/IS management table 40, the MS logical block management table 35, the FS/IS logical block management table 42, and the intra-FS/IS cluster management table 44

The structure of an MS area including the MS 11, the MSIB 11 a, and the TFS 11 b is managed in an MS structure management table (not shown). Specifically, logical blocks and the like allocated to the MS 11, the MSIB 11 a, and the TFS 11 b are managed. The structure of an FS/IS area including the FS 12, the FSIB 12 a, and the IS 13 is managed in an FS/IS structure management table (not shown). Specifically, logical blocks and the like allocated to the FS 12, the FSIB 12 a, and the IS 13 are managed.

Read Processing

Read processing is explained with reference to a flowchart shown in FIG. 18. When a Read command and LBA as a readout address are input from the ATA-command processing unit 121, the data managing unit 120 searches through the RC cluster management table 23 shown in FIG. 9 and the WC cluster management table 25 shown in FIG. 10 (step S100). Specifically, the data managing unit 120 selects lines corresponding to LSB (k−i) bits (see FIG. 7) of a cluster address of the LBA from the RC cluster management table 23 and the WC cluster management table 25 and compares logical track addresses 23 b and 25 c entered in each way of the selected lines with a track address of the LBA (step S110). When a way such that a logical track address entered in itself coincides with a track address of LEA is present, the data managing unit 120 regards this as cache hit. The data managing unit 120 reads out data of the WC 21 or the RC 22 corresponding to the hit line and way of the RC cluster management table 23 or the WC cluster management table 25 and sends the data to the ATA-command processing unit 121 (step S115).

When there is no hit in the RC 22 or the WC 21 (step S110), the data managing unit 120 searches in which part of the NAND memory 10 a cluster as a search object is stored. First, the data managing unit 120 searches through the track management table 30 shown in FIG. 12 (step S120). The track management table 30 is indexed by the logical track address 30 a. Therefore, the data managing unit 120 checks only entries of the logical track address 30 a coinciding with the logical track address designated by the LBA.

The data managing unit 120 selects a corresponding bit from the cluster bitmap 30 b based on a logical cluster address of the LBA desired to be checked. When the corresponding bit indicates “0”, this means that latest data of the cluster is surely present the MS (step S130). In this case, the data managing unit 120 obtains logical block ID and a track position in which the track is present from the logical block ID 30 c and the intra-logical block track position 30 d in the same entry of the logical track address 30 a. The data managing unit 120 calculates an offset from the track position using LSB (k−i) bits of the cluster address of the LBA. Consequently, the data managing unit 120 can calculate position where cluster data corresponding to the cluster address in the NAND memory 10 is stored. Specifically, the logical-NAND-layer managing unit 120 b gives the logical block ID 30 c and the intra-logical block position 30 d acquired from the track management table 30 as explained above and the LSB (k−i) bits of the logical cluster address of the LBA to the physical-NAND-layer managing unit 120 c.

The physical-NAND-layer managing unit 120 c acquires a physical block address (a physical block ID) corresponding to the logical block ID 30 c from the logical-to-physical translation table 50 shown in FIG. 17 having the logical block ID as an index (step S160). The data managing unit 120 calculates a track position (a track top position) in the acquired physical block ID from the intra-logical block track position 30 d and further calculates, from the LSB (k−i) bits of the cluster address of the LBA, an offset from the calculated track top position in the physical block ID. Consequently, the data managing unit 120 can acquire cluster data in the physical block. The data managing unit 120 sends the cluster data acquired from the MS 11 of the NAND memory 10 to the ATA-command processing unit 121 via the RC 22 (step S180).

On the other hand, when the corresponding bit indicates “1” in the search through the cluster bitmap 30 b based on the cluster address of the LBA, it is likely that the cluster is stored in the FS 12 or the IS 13 (step S130). In this case, the data managing unit 120 extracts an entry of the cluster table pointer 30 e among relevant entries of the track address 30 a in the track management table 30 and sequentially searches through linked lists corresponding to a relevant logical track address of the FS/IS management table 40 using this pointer (step S140). Specifically, the data managing unit 120 searches for an entry of the logical cluster address 40 a coinciding with the logical cluster address of the LBA in the linked list of the relevant logical track address. When the coinciding entry of the logical cluster address 40 a is present (step S150), the data managing unit 120 acquires the logical block ID 40 b and the intra-logical block cluster position 40 c in the coinciding list. In the same manner as explained above, the data managing unit 120 acquires cluster data in the physical block using the logical-to-physical translation table 50 (steps S160 and S180). Specifically, the data managing unit 120 acquires a physical block address (a physical block ID) corresponding to the acquired logical block ID from the logical-to-physical translation table 50 (step S160) and calculates a cluster position of the acquired physical block ID from an intra-logical block cluster position acquired from an entry of the intra-logical block cluster position 40 c. Consequently, the data managing unit 120 can acquire cluster data in the physical block. The data managing unit 120 sends the cluster data acquired from the FS 12 or the IS 13 of the NAND memory 10 to the ATA-command processing unit 121 via the RC 22 (step S180).

When the cluster as the search object is not present in the search through the FS/IS management table 40 (step S150), the data managing unit 120 searches through the entries of the track management table 30 again and decides a position on the MS 11 (step S170).

Write Processing

Write processing is explained with reference to a flowchart shown in FIG. 19. Data written by a Write command not for FUA (directly performing writing in an NAND bypassing a DRAM cache) is always once stored on the WC 21. Thereafter, the data is written in the NAND memory 10 according to conditions. In the write processing, it is likely that flush processing and compaction processing are performed. In this embodiment, the write processing is roughly divided into two stages of write cache flash processing (hereinafter, WCF processing) and clean input buffer processing (hereinafter, CIB processing). Steps S300 to S320 indicate processing from a Write request from the ATA-command processing unit 121 to the WCF processing. Step S330 to the last step indicate the CIB processing.

The WCF processing is processing for copying data in the WC 21 to the NAND memory 10 (the FSIB 12 a of the FS 12 or the MSIB 11 a of the MS 11). A Write request or a Cache Flush request alone from the ATA-command processing unit 121 can be completed only by this processing. This makes it possible to limit a delay in the started processing of the Write request of the ATA-command processing unit 121 to, at the maximum, time for writing in the NAND memory 10 equivalent to a capacity of the WC 21.

The CIB processing includes processing for moving the data in the FSIB 12 a written by the WCF processing to the FS 12 and processing for moving the data in the MSIB 11 a written by the WCF processing to the MS 11. When the CIB processing is started, it is likely that data movement among the components (the FS 12, the IS 13, the MS 11, etc.) in the NAND memory and compaction processing are performed in a chain-reacting manner. Time required for the overall processing substantially changes according to a state.

First, details of the WCF processing are explained. When LBA as a Write command and a writing address is input from the ATA-command processing unit 121, the DRAM-layer managing unit 120 a searches through the WC cluster management table 25 shown in FIG. 10 (steps S300 and S305). A state of the WC 21 is defined by the state flag 25 a (e.g., 3 bits) of the WC cluster management table 25 shown in FIG. 10. Most typically, a state of the state flag 25 a transitions in the order of Invalid (usable)→a wait for writing from an ATA→Valid (unusable)→a wait for flush to an NAND→Invalid (usable). First, a line at a writing destination is determined from cluster address LSB (k−i) bits of the LBA and n ways of the determined line are searched. When the logical track address 25 c same as that of the input LBA is stored in the n ways of the determined lines (step S305), the DRAM-layer managing unit 120 a secures this entry as an entry for cluster writing because the entry is overwritten (Valid (unusable)→a wait for writing from an ATA).

The DRAM-layer managing unit 120 a notifies the ATA-command processing unit 121 of a DRAM address corresponding to the entry. When writing by the ATA-command processing unit 121 is finished, the data managing unit 120 changes the state flag 25 a of the entry to Valid (unusable) and registers required data in spaces of the sector position bitmap 25 b and the logical track address 25 c. The data managing unit 120 updates the WC track management table 24. Specifically, when an LBA address same as the logical track address 24 a already registered in the lists of the WC track management table 24 is input, the data managing unit 120 updates the number of WC clusters 24 b and the way-line bitmap 24 c of a relevant list and changes the next pointer 24 d such that the list becomes a latest list. When an Lap, address different from the logical track address 24 a registered in the lists of the WC track management table 24 is input, the data managing unit 120 creates a new list having the entries of the logical track address 24 a, the number of WC clusters 24 b, the way-line bitmap 24 c, and the next pointer 24 d and registers the list as a latest list. The data managing unit 120 performs the table update explained above to complete the write processing (step S320).

On the other hand, when the logical track address 25 c same as that of the input LBA is not stored in the n ways of the determined line, the data managing unit 120 judges whether flush to the NAND memory is necessary (step S305). First, the data managing unit 120 judges whether a writable way in the determined line is a last nth way. The writable way is a way having the state flag 25 a of Invalid (usable) or a way having the state flag 25 a of Valid (unusable) and a wait for flush to a NAND. When the state flag 25 a is a wait for flush to a NAND, this means that flush is started and an entry is a wait for the finish of the flush. When the writable way is not the last nth way and the writable way is a way having the state flag 25 a of Invalid (usable), the data managing unit 120 secures this entry as an entry for cluster writing (Invalid (usable)→a wait for writing from an ATA). The data managing unit 120 notifies the ATA-command processing unit 121 of a DRAM address corresponding to the entry and causes the ATA-command processing unit 121 to execute writing. In the same manner as explained above, the data managing unit 120 updates the WC cluster management table 25 and the WC track management table 24 (step S320).

When the writable way is not the last nth way and when the writable way is the way having the state flag 25 a of Valid (unusable) and a wait for flush to a NAND, the data managing unit 120 secures this entry as an entry for cluster writing (Valid (unusable) and a wait for flush to a NAND→Valid (unusable) and a wait for flush from a NAND and a wait for writing from an ATA). When the flush is finished, the data managing unit 120 changes the state flag 25 a to a wait for writing from an ATA, notifies the ATA-command processing unit 121 of a DRAM address corresponding to the entry, and causes the ATA-command processing unit 121 to execute writing. In the same manner as explained above, the data managing unit 120 updates the WC cluster management table 25 and the WC track management table 24 (step S320).

The processing explained above is performed when flush processing does not have to be triggered when a writing request from the ATA-command processing unit 121 is input. On the other hand, processing explained below is performed when flush processing is triggered after a writing request is input. At step S305, when the writable way in the determined line is the last nth way, the data managing unit 120 selects a track to be flushed, i.e., an entry in the WC 21 based on the condition explained in (i) of the method of determining data to be flushed from the WC 21 to the NAND memory 10, i.e.,

(i) when a writable way determined by a tag is a last (in this embodiment, nth) free way, i.e., when the last free way is used, a track updated earliest based on an LRU among tracks registered in the line is decided to be flushed.

When that track to be flushed is determined according to the policy explained above, as explained above, if all clusters in the WC 21 included in an identical track are to be flushed and an amount of clusters to be flushed exceeds 50% of a track size, i.e., if the number of valid clusters in the WC is equal to or larger than 2^((k−i−1)) in the track decided to be flushed, the DRAM-layer managing unit 120 a performs flush to the MSIB 11 a (step S310). If the amount of clusters does not exceeds 50% of the track size, i.e., the number of valid clusters in the WC is smaller than 2^((k−i−1)) in the track decided to be flushed, the DRAM-layer managing unit 120 a flushes the track to the FSIB 12 a (step S315). Details of the flush from the WC 21 to the MSIB 11 a and the flush from the WC 21 to the FSIB 12 a are explained later. The state flag 25 a of the selected flush entry is transitioned from Valid (unusable) to a wait for flush to the NAND memory 10.

This judgment on a flush destination is executed by using the WC track management table 24. An entry of the number of WC clusters 24 indicating the number of valid clusters is registered in the WC track management table 24 for each logical track address. The data managing unit 120 determines which of the FSIB 12 a and the MSIB 11 a should be set as a destination of flush from the WC 21 referring to the entry of the number of WC clusters 24 b. All clusters belonging to the logical track address are registered in a bitmap format in the way-line bitmap 24 c. Therefore, in performing flush, the data managing unit 120 can easily learn, referring to the way-line bitmap 24 c, a storage position in the WC 21 of each of the clusters that should be flushed.

During the write processing or after the write processing, the data managing unit 120 also execute the flush processing to the NAND memory 10 in the same manner when the following condition is satisfied:

(ii) the number of tracks registered in the WC 21 exceeds a predetermined number.

WC→MSIB (Copy)

When flush from the WC 21 to the MSIB 11 a is performed according to the judgment based on the number of valid clusters (the number of valid clusters is equal to or larger than 2^((k−i−1))), the data managing unit 120 executes a procedure explained below as explained above (step S310).

1. Referring to the WC cluster management table 25 and referring to the sector position bitmaps 25 b in tags corresponding to clusters to be flushed, when all the sector position bitmaps 25 b are not “1”, the data managing unit 120 performs intra-track sector padding explained later for merging with a sector in an identical cluster included in the NAND memory 10. The data managing unit 120 also executes passive merge processing for reading out a cluster not present in the WC 21 in a track from the NAND memory 10 and merging the cluster.

2. When the number of tracks decided to be flushed is less than 2^(i), the data managing unit 120 adds tracks decided to be flushed having 2^((k−i−1)) or more valid clusters until the number of tracks decided to be flushed reaches 2^(i) from the oldest one in the WC 21.

3. When there are 2^(i) or more tracks to be copied, the data managing unit 120 performs writing in the MSIB 11 a in logical block units with each 2¹ tracks as a set.

4. The data managing unit 120 writes the tracks that cannot form a set of 2^(i) tracks in the MSIB 11 a in track units.

5. The data managing unit 120 invalidates clusters and tracks belonging to the copied tracks among those already present on the FS, the IS, and the MS after the Copy is finished.

Update processing for the respective management tables involved in the Copy processing from the WC 21 to the MSIB 11 a is explained. The data managing unit 120 sets the state flag 25 a in entries corresponding to all clusters in the WC 21 belonging to an flushed track in the WC cluster management table 25 Invalid. Thereafter, writing in these entries is possible. Concerning a list corresponding to the flushed track in the WC track management table 24, the data managing unit 120 changes or deletes, for example, the next pointer 24 d of an immediately preceding list and invalidates the list.

On the other hand, when track movement from the WC 21 to the MSIB 11 a is performed, the data managing unit 120 updates the track management table 30 and the MS logical block management table 35 according to the track movement. First, the data managing unit 120 searches for the logical track address 30 a as an index of the track management table 30 to judge whether the logical track address 30 a corresponding to the moved track is already registered. When the logical track address 30 a is already registered, the data managing unit 120 updates fields of the cluster bitmap 30 b (because the track is moved to the MS 11 side, all relevant bits are set to “0”) of the index and the logical block ID 30 c+the intra-logical block track position 30 d. When the logical track address 30 a corresponding to the moved track is not registered, the data managing unit 120 registers the cluster bitmap 30 b and the logical block ID 30 c+the intra-logical block track position 30 d in an entry of the relevant logical track address 30 a. The data managing unit 120 updates, according to the change of the track management table 30, entries of the logical block ID 35 a, the track management pointer 35 b, the number of valid tracks 35 c, the writable top track 35 d, and the like in the MS logical block management table 35 when necessary.

When track writing is performed from other areas (the FS 12 and the IS 13) or the like to the MS 11 or when intra-MS track writing by compaction processing in the MS 11 is performed, valid clusters in the WC 21 included in the track as a writing object are simultaneously written in the MS. Such passive merge is present as writing from the WC 21 to the MS 11. When such passive merge is performed, the clusters are deleted from the WC 21 (invalidated).

WC→FSIB (Copy)

When flush from the WC 21 to the FSIB 12 a is performed according to the judgment based on the number of valid clusters (the number of valid clusters is equal to or larger than 2^((k−i−1))), the data managing unit 120 executes a procedure explained below as explained above.

1. Referring to the sector position bitmaps 25 b in tags corresponding to clusters to be flushed, when all the sector position bitmaps 25 b are not “1”, the data managing unit 120 performs intra-cluster sector padding for merging with a sector in an identical cluster included in the NAND memory 10.

2. The data managing unit 120 extracts clusters from a track having only less than 2^((k−i−1)) valid clusters tracing tracks in the WC in order from oldest one and, when the number of valid clusters reaches 2^(k), writes all the clusters in the FSIB 12 a in logical block units.

3. When 2^(k) valid clusters are not found, the data managing unit 120 writes all tracks with the number of valid clusters less than 2(k−i−1) in the FSIB 12 a by the number equivalent to the number of logical pages.

4. The data managing unit 120 invalidates clusters same as those copied among those already present on the FS and the IS after the Copy is finished.

Update processing for the respective management tables involved in such Copy processing from the WC 21 to the FSIB 12 a is explained. The data managing unit 120 sets the state flag 25 a in entries corresponding to all clusters in the WC 21 belonging to an flushed track in the WC cluster management table 25 Invalid. Thereafter, writing in these entries is possible. Concerning a list corresponding to the flushed track in the WC track management table 24, the data managing unit 120 changes or deletes, for example, the next pointer 24 d of an immediately preceding list and invalidates the list.

On the other hand, when cluster movement from the WC 21 to the FSIB 12 a is performed, the data managing unit 120 updates the cluster table pointer 30 e, the number of FS clusters 31 f, and the like of the track management table 30 according to the cluster movement. The data managing unit 120 also updates the logical block ID 40 b, the intra-logical block cluster position 40 c, and the like of the FS/IS management table 40. Concerning clusters not present in the FS 12 originally, the data managing unit 120 adds a list to the linked list of the FS/IS management table 40. According to the update, the data managing unit 120 updates relevant sections of the MS logical block management table 35, the FS/IS logical block management table 42, and the intra-FS/IS cluster management table 44.

CIB Processing

When the WCF processing explained above is finished, the logical-NAND-layer managing unit 120 b executes CIB processing including processing for moving the data in the FSIB 12 a written by the WCF processing to the FS 12 and processing for moving the data in the MSIB 11 a written by the WCF processing to the MS 11. When the CIB processing is started, as explained above, it is likely that data movement among the blocks and compaction processing are performed in a chain reacting manner. Time required for the overall processing substantially changes according to a state. In the CIB processing, basically, first, the CIB processing in the MS 11 is performed (step S330), subsequently, the CIB processing in the FS 12 is performed (step S340), the CIB processing in the MS 11 is performed again (step S350), the CIB processing in the IS 13 is performed (step S360), and, finally, the CIB processing in the MS 11 is performed again (step S370). In flush processing from the FS 12 to the MSIB 11 a, flush processing from the FS 12 to the IS 13, or flush processing from the IS 13 to the MSIB 11 a, when a loop occurs in a procedure, the processing may not be performed in order. The CIB processing in the MS 11, the CIB processing in the FS 12, and the CIB processing in the IS 13 are separately explained.

CIB Processing in the MS 11

First, the CIB processing in the MS 11 is explained (step S330). When movement of track data from the WC 21, the FS 12, and the IS 13 to the MS 11 is performed, the track data is written in the MSIB 11 a. After the completion of writing in the MSIB 11 a, as explained above, the track management table 30 is updated and the logical block ID 30 c, the intra-block track position 30 d, and the like in which tracks are arranged are changed (Move). When new track data is written in the MSIB 11 a, track data present in the MS 11 or the TFS 11 b from the beginning is invalidated. This invalidation processing is realized by invalidating a track from an entry of a logical block in which old track information is stored in the MS logical block management table 35. Specifically, a pointer of a relevant track in a field of the track management pointer 35 b in the entry of the MS logical block management table 35 is deleted and the number of valid tracks is decremented by one. When all tracks in one logical block are invalidated by this track invalidation, the Valid flag 35 e is invalidated. Blocks of the MS 11 including invalid tracks are generated by such invalidation or the like. When this is repeated, efficiency of use of blocks may fall to cause insufficiency in usable logical blocks.

When such a situation occurs and the number of logical blocks allocated to the MS 11 exceeds the upper limit of the number of blocks allowed for the MS 11, the data managing unit 120 performs compaction processing to create an invalid free block FB. The invalid free block FB is returned to the physical-NAND-layer managing unit 120 c. The logical-NAND-layer managing unit 120 b reduces the number of logical blocks allocated to the MS 11 and, then, acquires a writable free block FB from the physical-NAND-layer managing unit 120 c anew. The compaction processing is processing for collecting valid clusters of a logical block as a compaction object in a new logical block or copying valid tracks in the logical block as the compaction object to other logical blocks to create an invalid free block FB returned to the physical-NAND-layer managing unit 120 c and improve efficiency of use of logical blocks. In performing compaction, when valid clusters on the WC, the FS, and the IS are present, the data managing unit 120 executes passive merge for merging all the valid clusters in a track area as a compaction object. Logical blocks registered in the TFS 11 b are not included in the compaction object.

An example of flush from the MSIB 11 a to the MS 11 or the TFS 11 b and compaction processing with presence of a full block in the MSIB 11 a set as a condition is specifically explained.

1. Referring to the Valid flag 35 e of the MS logical block management table 35, when an invalidated logical block is present in the MS 11, the data managing unit 120 sets the block as an invalid free block FB.

2. The data managing unit 120 flushes a full logical block in the MSIB 11 a to the MS 11. Specifically, the data managing unit 120 updates the MS structure management table (not shown) explained above and transfers the logical block from management under the MSIB to management under the MS.

3. The data managing unit 120 judges whether the number of logical blocks allocated to the MS 11 exceeds the upper limit of the number of blocks allowed for the MS 11. When the number of logical blocks exceeds the upper limit, the data managing unit 120 executes MS compaction explained below.

4. Referring to a field and the like of the number of valid tracks 35 c of the MS logical block management table 35, the data managing unit 120 sorts logical blocks having invalidated tracks among logical blocks not included in the TFS 11 b with the number of valid tracks.

5. The data managing unit 120 collects tracks from logical blocks with small numbers of valid tracks and carries out compaction. In carrying out compaction, first, the tracks are copied for each of the logical blocks (2^(i) tracks are copied at a time) to carry out compaction. When a track as a compaction object has valid clusters in the WC 21, the FS 12, and the IS 13, the data managing unit 120 also merges the valid clusters.

6. The data managing unit 120 sets a logical block at a compaction source as an invalid free block FB.

7. When the compaction is performed and one logical block includes the valid 2^(i) tracks, the data managing unit 120 moves the logical block to the top of the TFS 11 b.

8. When the invalid free block FB can be created by copying the valid tracks in the logical block to another logical block, the data managing unit 120 additionally records the valid tracks in the number smaller than 2^(i) in the MSIB 11 a in track units.

9. The data managing unit 120 sets the logical block at the compaction source as the invalid free block FB.

10. When the number of logical blocks allocated to the MS 11 falls below the upper limit of the number of blocks allowed for the MS 11, the data managing unit 120 finishes the MS compaction processing.

CIB Processing in the FS 12

The CIB processing in the FS 12 is explained (step S340). When logical blocks in which all pages are written are created in the FSIB 12 a by cluster writing processing from the WC 21 to the FSIB 12 a, the blocks in the FSIB 12 a are moved from the FSIB 12 a to the FS 12. According to the movement, an old logical block is flushed from the FS 12 of the FIFO structure configured by a plurality of logical blocks.

Flush from the FSIB 12 a to the FS 12 and block flush from the FS 12 are specifically realized as explained below.

1. Referring to the Valid flag 35 e and the like of the FS/IS logical block management table 42, when an invalidated logical block is present in the FS 12, the data managing unit 120 sets the block as the invalid free block FB.

2. The data managing unit 120 flushes a full block in the FSIB 12 a to the FS 12. Specifically, the data managing unit 120 updates the FS/IS structure management table (not shown) and transfers the block from management under the FSIB to management under the FS.

3. The data managing unit 120 judges whether the number of logical blocks allocated to the FS 12 exceeds the upper limit of the number of blocks allowed for the FS 12. When the number of logical blocks exceeds the upper limit, the data managing unit 120 executes flush explained below.

4. First, the data managing unit 120 determines cluster data that should be directly moved to the MS 11 without being moving to the IS 13 among cluster data in an oldest logical block as an flush object (actually, because a management unit of the MS is a track, the cluster data is determined in track units).

-   -   (A) The data managing unit 120 scans valid clusters in the         logical block as the flush object in order from the top of a         page.     -   (B) The data managing unit 120 finds, referring to a field of         the number of FS clusters 30 f of the track management table 30,         how many valid clusters a track to which the cluster belongs has         in the FS.     -   (C) When the number of valid clusters in the track is equal to         or larger than a predetermined threshold (e.g., 50% of 2^(k−1)),         the data managing unit 120 sets the track as a candidate of         flush to the MS.

5. The data managing unit 120 writes the track that should be flushed to the MS 11 in the MSIB 11 a.

6. When an flush track is left, the data managing unit 120 further executes flush to the MSIB 11.

7. When valid clusters are present in the logical block as the flush object even after the processing of 2 to 4 above, the data managing unit 120 moves the logical block to the IS 13.

When flush from the FS 12 to the MSIB 11 a is performed, immediately after the flush, the data managing unit 120 executes the CIB processing in the MS 11 (step s350).

CIB Processing in the IS 13

The CIB processing in the IS 13 is explained (step S360). The logical block is added to the IS 13 according to the block movement from the FS 12 to the IS 13. However, according to the addition of the logical block, the number of logical blocks exceeds an upper limit of the number of blocks that can be managed in the IS 13 formed of a plurality of logical blocks. When the number of logical blocks exceeds the upper limit, in the IS 13, first, the data managing unit 120 performs flush of one to a plurality of logical blocks to the MS 11 and, then, executes IS compaction. Specifically, the data managing unit 120 executes a procedure explained below.

1. The data managing unit 120 sorts tracks included in the IS 13 with the number of valid clusters in the track×a valid cluster coefficient, collects 2^(i+1) tracks (for two logical blocks) with a large value of a product, and flushes the tracks to the MSIB 11 a.

2. When a total number of valid clusters of 2^(i+1) logical blocks with a smallest number of valid clusters is, for example, equal to or larger than 2^(k) (for one logical block), which is a predetermined set value, the data managing unit 120 repeats the step explained above.

3. After performing the flush, the data managing unit 120 collects 2^(k) clusters in order from a logical block with a smallest number of valid clusters and performs compaction in the IS 13.

4. The data managing unit 120 returns a logical block not including a valid cluster among the logical blocks at compaction sources as an invalid free block FB.

When flush from the IS 13 to the MSIB 11 a is performed, immediately after the flush, the data managing unit 120 executes the CIB processing in the MS 11 (step S370).

FIG. 20 is a diagram of combinations of inputs and outputs in a flow of data among components and indicates what causes the flow of the data as a trigger. Basically, data is written in the FS 12 according to cluster flush from the WC 21. However, when intra-cluster sector padding (cluster padding) is necessary incidentally to flush from the WC 21 to the FS 12, data from the FS 12, the IS 13, and the MS 11 is copied. In the WC 21, it is possible to perform management in sector (512 B) units by identifying presence or absence of 2^((l−k)) sectors in a relevant cluster address using the sector position bitmap 25 b in the tag of the WC cluster management table 25. On the other hand, a management unit of the FS 12 and the IS 13, which are functional components in the NAND memory 10, is a cluster and a management unit of the MS 11 is a track. In this way, a management unit in the NAND memory 10 is larger than the sector. Therefore, in writing data in the NAND memory 10 from the WC 21, when data with a cluster address identical with that of the data to be written is present in the NAND memory 10, it is necessary to write the data in the NAND memory 10 after merging a sector in a cluster written in the NAND memory 10 from the WC 21 and a sector in the identical cluster address present in the NAND memory 10.

This processing is the intra-cluster sector padding processing (the cluster padding) and the intra-track sector padding (the track padding) shown in FIG. 20. Unless these kinds of processing are performed, correct data cannot be read out. Therefore, when data is flushed from the WC 21 to the FSIB 12 a or the MSIB 11 a, the WC cluster management table 25 is referred to and the sector position bitmaps 25 b in tags corresponding to clusters to be flushed is referred to. When all the sector position bitmaps 25 b are not “1”, the intra-cluster sector padding or the intra-track sector padding for merging with a sector in an identical cluster or an identical track included in the NAND memory 10 is performed. A work area of the DRAM 20 is used for this processing. Data is written in the MSIB 11 a or written in the FSIB 12 a from the work area of the DRAM 20.

In the IS 13, basically, data is written according to block flush from the FS 12 (Move) or written according to compaction in the IS. In the MS 11, data can be written from all sections. When the data is written, in the MS 11, padding due to data of the MS itself can be caused because data can only be written in track units. When the data is written in track units, fragmented data in other blocks are also written according to passive merge. Moreover, in the MS 11, data is also written according to MS compaction. In the passive merge, when track flush or logical block flush (flush for 2^(i) tracks) from one of three components of the WC 21, the FS 12, or the IS 13 to the MS 11 is performed, valid clusters in two components included in a track (or a logical block) as an flush object in one component and valid clusters in the MS 11 are collected in the work area of the DRAM 20 and written in the MSIB 11 a from the work area of the DRAM 20 as data for one track.

This embodiment is explained more in detail. FIG. 21 is a diagram of a detailed functional configuration related to the write processing of the NAND memory 10 shown in FIG. 6. Redundant explanation is omitted.

FS Configuration

An FS unit 12Q includes the FSIB 12 a and the FS 12. The FS 12 has a capacity for a large number of logical blocks. The FIFO structure is managed in logical block units. The FS input buffer (FSIB) 12 a to which data flushed from the WC 21 is input is provided at a pre-stage of the FS 12. The FSIB 12 a includes an FS full block buffer (FSFB) 12 aa and an FS additional recording buffer (FS additional recording IB) 12 ab. The FSFB 12 aa has a capacity for one to a plurality of logical blocks. The FS additional recording IB 121 ab also has a capacity for one to a plurality of logical blocks. When the data flushed from the WC 21 is data for one logical block, data copy in logical block units to the FSFB 12 aa is performed. When the data is not the data for one logical block, additional writing in logical page unit to the FS additional recording IB 12 ab is performed.

IS Configuration

An IS unit 13Q includes the IS 13, an IS input buffer (ISIB) 13 a, and an IS compaction buffer 13 c. The ISIB 13 a has a capacity for one to a plurality of logical blocks, the IS compaction buffer 13 c has a capacity for, for example, one logical block, and the IS 13 has a capacity for a large number of logical blocks. In the IS 13, as in the FS 12, the FIFO structure is managed in logical block units. The IS compaction buffer 13 c is a buffer for performing compaction in the IS unit 13Q.

As explained above, the IS unit 13Q performs management of data in cluster units in the same manner as the FS unit 12Q. When movement of a logical block from the FS unit 12Q to the IS unit 13Q, i.e., flush from the FS 12 is performed, a logical block as an flush object, which is a previous management object of the FS unit 12Q, is changed to a management object block of the IS unit 13 (specifically, the ISIB 13 a) according to relocation of a pointer. When the number of blocks of the IS 13 exceeds a predetermined upper limit according to the movement of the logical block from the FS unit 12Q to the IS unit 13Q, data flush from the IS 13 to an MS unit 11Q and IS compaction processing are executed and the number of blocks of the IS unit 13Q is returned to a specified value.

MS Configuration

The MS unit 11Q includes the MSIB 11 a, the track pre-stage buffer (TFS) 11 b, and the MS 11. The MSIB 11 a includes one to a plurality of (in this embodiment, four) MS full block input buffers (hereinafter, MSFBs) 11 aa and one to a plurality of (in this embodiment, two) additional recording input buffers (hereinafter, MS additional recording IBs) flab. One MSFB 11 aa has a capacity for one logical block. The MSFB 11 aa is used for writing in logical block units. One MS additional recording IB 11 ab has a capacity for a logical block. The MS additional recording IB 11 ab is used for additional writing in track units.

A logical block flushed from the WC 21, a logical block flushed from the FS 12, or a logical block flushed from the IS 13 is copied to the MSFB 11 aa. The logical block copied to one MSFB 11 aa is directly moved to the MS 11 without being moved through the TFS 11 b. After the logical block is moved to the MS 11, a free block FB is allocated as the MSFB 11 aa.

A track flushed from the WC 21 or a track flushed from the FS 12 is copied to the MS additional recording IB 11 ab in a additional recording manner. A full logical block in such MS additional recording IB 11 ab additionally recorded in track units is moved to the TFS 11 b. After the logical block is moved to the TFS 11 b, a free block FB is allocated as the MS additional recording IB 11 ab.

As explained above, the TFS 11 b is a buffer that has a capacity for a large number of logical blocks and has the FIFO structure interposed between the MS additional recording IB 11 ab and the MS 11. A full logical block in the MS additional recording IB 11 ab additionally recorded in track units is moved to an input side of the TFS 11 b having the FIFO structure. A logical block formed according to the compaction processing in the MS 11 is moved from the MS compaction buffer 11 c. The MS compaction buffer 11 c is a buffer for performing compaction in the MS 11. When a track in the MS is written in the MS compaction buffer 11 c according to the compaction processing in the MS 11, passive merge for writing valid clusters in the WC 21, the FS unit 12Q, and the IS unit 13Q, which are included in the track as a writing object, in the MS compaction buffer 11 c via the work area of the DRAM 20 is performed. In this embodiment, logical blocks registered in the MSIB 11 a and the TFS 11 b are not included in the compaction object.

FIG. 22 is a diagram of a more detailed functional configuration of the data managing unit 120. As explained above, the data managing unit 120 includes the DRAM-layer managing unit 120 a that performs management of data stored in the DRAM 20, the logical-NAND-layer managing unit 120 b that performs management of data stored in the NAND memory 10, and the physical-NAND-layer managing unit 120 c that manages the NAND memory 10 as a physical storage device.

The DRAM-layer managing unit 120 a includes the RC cluster management table 23, the WC cluster management table 25, and the WC track management table 24 and performs management of a DRAM layer based on the management tables. The logical-NAND-layer managing unit 120 b includes, besides the track management table 30, the MS block management table 35, the FS/IS management table 40, the FS/IS logical block management table 42, and the intra-FS/IS cluster management table 44, an MS structure management table 60 and an FS/IS structure management table 65 and performs management of a logical NAND layer of the NAND memory 10 based on the management tables. The physical-NAND-layer managing unit 120 c includes, besides the logical-to-physical translation table 50, a bad block management table (BB management table) 200, a reserved block management table (RB block management table) 210, a free block management table (FB management table) 220, and an active block management table (AB management table) 230 and performs management of a physical NAND layer of the NAND memory 10 using the management tables.

Physical NAND Layer

First, the physical NAND layer is explained. As explained above, in the 32-bit double speed mode, four channels (ch0, ch1, ch2, and ch3) are actuated in parallel and erasing, writing, and readout are performed by using a double speed mode of an NAND memory chip. As shown in FIG. 23, each of NAND memory chips in the four parallel operation elements 10 a to 10 d is divided into, for example, two districts of a plane 0 and a plane 1. The number of division is not limited to two. The plane 0 and the plane 1 include peripheral circuits independent from one another (e.g., a row decoder, a column decoder, a page buffer, and a data cache) and can simultaneously perform erasing, writing, and readout based on a command input from the NAND controller 112. In the double speed mode of the NAND memory chip, high-speed writing is realized by controlling the plane 0 and the plane 1 in parallel.

A physical block size is 512 kB. Therefore, in the 32-bit double speed mode, an erasing unit of the physical block is increased to 512 kB×4×2=4 MB according to the parallel operation of the four channels and the simultaneous access to the two planes. As a result, in the 32-bit double speed mode, eight planes operate in parallel.

FIG. 24 is a diagram of another example of the logical-to-physical translation table 50. In the logical-to-physical translation table 50 shown in FIG. 24, a field of erasing time 50 e indicating time when a logical block corresponding to the logical block ID 50 a is erased is added to the logical-to-physical table 50 shown in FIG. 17. As the erasing time 50 e, for example, a value obtained by measuring the number of times an erasing operation is applied to the logical blocks in the NAND memory chip or energization time of the NAND controller 112 only has to be used. The erasing time 50 e is used for free block FB management in the FB management table 220 explained later.

The BB management table 200 is a table for managing the bad block BB in physical block (512 kB) units. As shown in FIG. 25, the BB management table 200 is formed in a two-dimensional array format having, for example, for every 4 (channels)×2 (planes/channels) intra-channel planes, information concerning physical blocks for (the number of physical blocks/planes)×(the number of NAND memory chips/one parallel operation element). In each entry of the BB management table 200, a physical block ID 200 a for each physical block is stored.

In the case of this embodiment, one NAND memory chip has a 2 GB size. Physical block IDs “0” to “2047” are allocated to a plane 0 of a first chip. Physical block IDs “2048” to “4095” are allocated to a plane 1 of the first chip. When the bad block BB generated during use is registered in the BB management table 200, the physical-NAND-layer managing unit 120 c adds bad blocks BB immediately behind last valid entries of intra-channel plane IDs (ID#0 to ID#7) corresponding thereto without sorting the bad blocks BB.

The RB management table 210 is a table for managing blocks (reserved blocks RB) remaining when 4 MB logical blocks are formed in eight physical block units (512 kB). The RB management table 210 is managed in a format same as that of the BB management table 200. By managing the blocks in FIFO for each of intra-channel plane IDs corresponding thereto, the reserved blocks are preferentially used in order from one registered earliest.

The FB management table 220 is a table for managing free blocks FB presently not allocated to applications in 4 MB logical block units and is a list in the FIFO format sorted in order of creation of the free blocks FB. A logical block ID is stored in each entry. The free block FB returned to the FB management table 220 according to compaction processing or the like is added to the tail end of the list. Free block FB allocation is performed by returning a top block of the list.

As shown in FIG. 26, the FB management table is configured in two stages of a return FIFO list 220 a and an allocation list 220 b. The return FIFO list 220 a is aligned in order of the erasing time 50 e. In the allocation list 220 b, a logical block with a smaller number of times of erasing 50 c is located closer to the top of the list. This is a configuration for preventing an erasing operation from being repeated at short time intervals. An unnecessary logical block returned to the FB management table 220 is added to the tail end of the return FIFO list 220 a and stored there for a fixed period.

A logical block pushed out from the return FIFO list 220 a is inserted in somewhere in the allocation list 220 b according to the number of times of erasing 50 c of the logical block. When allocation of the free block FB is requested from the logical-NAND-layer managing unit 120 b, the logical-NAND-layer managing unit 120 c extracts the free block FB from the top of the allocation list 220 b and allocates the free block FB.

With the FB management table, it is possible to equally distribute logical blocks to be erased (wear leveling processing) such that the numbers of times of erasing and erasing intervals of all logical blocks are generally equal. It is known that the life of a NAND-type flash memory depends on intervals of erasing processing besides the number of times of erasing and, as the intervals are longer, retention properties are better and the life is longer. This also indicates that, when the erasing intervals are short, the retention properties are bad and the life is spoiled. It is also known that, even if writing is performed at short intervals, unless appropriate long term erasing is performed, the retention properties are recovered.

The AB management table 230 is a list of logical blocks (active blocks AB), to which applications are allocated, allocated from the free blocks FB. As in the FB management table 220, in the AB management table 230, a logical block ID is stored in each entry. A logical block with earlier registration order is located closer to the top. The AB management table is used for, for example, refresh processing.

The refresh processing is a technique for preventing an error exceeding error correction ability of the SSD 110 from occurring because of the influence of aged deterioration of written data and read disturb, which is data breakage involved in read processing. Specifically, for example, before an error exceeding the error correction ability occurs, processing for reading out stored data and performing error correction and, then, rewriting the data in the NAND-type flash memory is performed. For example, a block with a large number of times of readout 50 d, a top block of the AB management table 230, and the like can be set as monitoring objects of the refresh processing.

The physical-NAND-layer managing unit 120 c performs logical block/physical block management explained below. First, a correspondence relation between a logical block ID and eight physical block IDs in the logical-to-physical translation table 50 is explained with reference to FIG. 27.

As explained above, eight physical block IDs associated with the logical block ID 50 a as an index of the logical-to-physical translation table 50 are registered in fields of the physical block ID 50 b of the logical-to-physical translation table 50. FIG. 27 is a diagram of a correspondence relation between logical block IDs and physical block IDs of the NAND memory 10. One section represents one physical block. A physical block ID is allocated to each of the physical blocks. A logical block L0 includes, for example, eight physical blocks in the first row and the third column, the second row and the second column, the third row and the second column, the fourth row and the second column, the fifth row and the second column, the six row and the second column, the seventh row and the second column, and the eighth row and the third column. A logical block L1 surrounded by a broken line BL1 includes, for example, eight physical blocks in the first row and a fourth column, the second row and the third column, the third row and the third column, the fourth row and the third column, the fifth row and the third column, the sixth row and the third column, the seventh row and the third column, and the eighth row and the fourth column.

Thereafter, for example, it is assumed that the physical block in the fourth row and the third column of the logical block L1 is registered in the BB management table 200 as the bad block BB that cannot be used as a storage area. The physical-NAND-layer managing unit 120 c detects the registration and selects, as a replacement candidate for the bad block BB, the reservation block RB in a channel and a plane identical with those of the physical block registered as the bad block BB from the RB management table 210. In the case of FIG. 27, a physical block (the reserved block RB) in the fourth row and the fourth column adjacent to the bad block BB is selected as a replacement candidate for the bad block BB in the fourth row and the third column.

The physical-NAND-layer managing unit 120 c searches through an entry of the logical block ID 50 a corresponding to the logical block L1 of the logical-to-physical translation table 50 and changes a physical block ID of the bad block BB corresponding to the fourth row and the third column among the eight physical block IDs included in a field of the physical block ID 50 b in the entry to a physical address ID corresponding to the reserved block RB in the fourth row and the fourth column selected from the RB management table 210. Consequently, thereafter, the logical block L1 includes a combination of eight new physical blocks in the first row and the fourth column, the second row and the third column, the third row and the third column, the fourth row and the fourth column, the fifth row and the third column, the sixth row and the third column, the seventh row and the third column, and the eighth row and the fourth row surrounded by an alternate long and short dash line. It is assumed that a logical block ID of the logical block L1 is “L1”.

Thereafter, the physical-NAND-layer managing unit 120 c secures a new free block FB from the FB management table 220. It is assumed that a logical block ID of the secured free block FB is “L3”. The physical-NAND-layer managing unit 120 c executes replacement of the logical block IDs using the logical-to-physical translation table 50. Specifically, the physical-NAND-layer managing unit 120 c associates the eight physical blocks, which are associated with the new free block FB with the logical block ID “L3”, with the logical block ID “L1” and associates the eight physical blocks in the first row and the fourth column, the second row and the third column, the third row and the third column, the fourth row and the fourth column, the fifth row and the third column, the sixth row and the third column, the seventh row and the third column, and the eighth row and the fourth row surrounded by the alternate long and short dash line with the logical block ID “L3”. The number of times of erasing 50 c, the number of times of readout 50 d, and the erasing time 50 e are also replaced according to the replacement of the logical block ID. Thereafter, the physical-NAND-layer managing unit 120 c registers the logical block ID “L3” in the FB management table 220.

On the other hand, when the reserved block RB that can be replaced with the bad block BB is not present, the physical-NAND-layer managing unit 120 c performs processing explained below. For example, it is assumed that the physical block in the fourth row and the third column is registered in the BB management table 200 as the bad block BB and the reserved block RB is not present in an identical channel and an identical plate for the bad block BB. In this case, first, the physical-NAND-layer managing unit 120 c registers the seven physical blocks in the first row and the fourth column, the second row and the third column, the third row and the third column, the fifth row and the third column, the sixth row and the third column, the seventh row and the third column, and the eighth row and the fourth column excluding the fourth row and the third column in the logical block L1 in the RB management table 210. Thereafter, in the same manner as explained above, the physical-NAND-layer managing unit 120 c secures a new free block FB from the FB management table 220 and executes replacement of the logical block IDs as explained above, and, then, sets the logical block ID acquired from the FB management table 220 unusable.

In this way, even when the bad block BB is generated, the physical-NAND-layer managing unit 120 c is executing replacement of the logical block IDs. Therefore, the logical block ID used in the logical-NAND-layer managing unit 120 b does not change before and after the generation of the bad block BB. Therefore, even when at least one of a plurality of physical blocks is registered as a bad block, a correspondence relation between LBA logical addresses and logical blocks is not changed. It is possible to prevent overhead of rewriting of the management tables in the logical-NAND-layer managing unit 120 b.

Erasing processing in the 32-bit double speed mode is explained. The physical-NAND-layer managing unit 120 c counts up, every time data in the NAND memory 10 is erased in logical block units, a field of the number of times of erasing 50 c in a logical block ID corresponding to an erased logical block of the logical-to-physical translation table 50 shown in FIG. 24 by one and updates the erasing time 50 e to latest data.

Logical NAND Layer

The MS structure management table 60 and the FS/IS structure management table 65 used for management in a logical NAND layer are explained with reference to FIGS. 28 and 29. The MS structure management table 60 shown in FIG. 28 includes an area for managing the structure of the MS unit 11Q and an area for storing state information. The MS structure management table 60 includes an MS buffer management table 61 for managing logical block IDs allocated as the MSFB 11 aa, the MS additional recording IB 11 ab, and the TFS 11 b, a logical block ID list by the number of valid tracks 62 for storing logical block IDs with a small number of valid tracks in order to increase the speed of sort processing during the MS compaction, and areas 63 and 64 for managing a maximum number of logical blocks MBL and the number of valid logical blocks VBL as state information.

In the MS structure management table 60, fixed fields 61 a to 61 c with a required number of entries are prepared for the MSFB 11 aa, the MS additional recording IB 11 ab, and the TFS 11 b. Logical block IDs are recorded in the fixed fields 61 a to 61 c. The field 61 c for the TFS 11 b has the linked list structure. FIFO-like management for the TFS 11 b having the FIFO structure is performed.

In the logical block ID list by the number of valid tracks 62, a required number of entries are prepared for a logical block with one valid track, a required number of entries are prepared for a logical block with two valid tracks, . . . , and a required number of entries are prepared for a logical block with 2¹−1 valid tracks. A logical block ID is recorded in each of the entries. When a field of the number of valid tracks 35 c of the MS logical block management table 35 is searched, the logical block ID list by the number of valid tracks 62 is always updated to a latest state. Logical blocks registered in the MS buffer management table 61 as the MSIB 11 a and the TFS 11 b are not entered in the logical block ID list by the number of valid tracks 62.

In the fixed field 63 for the maximum number of logical blocks MBL as state information, a maximum number of logical blocks MBL as the number of logical blocks that the MS unit 11Q is allowed to acquire is recorded. In the fixed field 64 for the number of valid logical blocks VBL as state information, the number of valid logical blocks VBL as the number of logical blocks presently managed as the MS unit 11Q is recorded.

The FS/IS structure management table 65 shown in FIG. 29 has an area for managing the structure of the FS unit 12Q and the IS unit 13Q. The FS/IS structure management table 65 includes an FS input buffer management table 66 for managing logical block ID allocated as the FSIB 12 a and the FS additional recording IB 12 ab, an FSFIFO management table 67 for managing the FIFO structure of the FS 12, an IS input buffer management table 68 for managing a logical block ID allocated as the ISIB 13 a, and the ISFIFO management table 69 for managing the FIFO structure of the IS 13.

In the FS input buffer management table 66, fixed fields 66 a and 66 b with a required number of entries are prepared for the FSFB 12 aa and the FS additional recording IB 12 ab. The FS/IS block ID 42 a as an index of the FS/IS logical block management table 42 is registered in the fixed fields 66 a and 66 b. In the IS input buffer management table 68, fixed fields with a required number of entries are prepared for the ISIB 13 a. The FS/IS block ID 42 a is registered in the fixed fields. In the FSFIFO management table 67, entries for the number of logical blocks forming the FIFO structure of the FS 12 are prepared in fixed fields. The FS/IS block ID 42 a is registered in the fixed fields of the FSFIFO management table 67. In the ISFIFO management table 69, entries for the number of logical blocks forming the FIFO structure of the IS 13 are prepared in fixed fields. The FS/IS block ID 42 a is registered in the fixed fields.

Update processing for the management tables involved in the Copy processing from the WC 21 to the MSIB 11 a in executing the write processing divided into the two stages (the WCF processing and the CIB processing) explained with reference to FIG. 19 is explained. Here, Copy in track units from the WC 21 to the MS additional recording IB 11 ab is performed. The DRAM-layer managing unit 120 a checks the WC track management table 24 in order from the top, referring to the way-line bitmap 24 c in a track entry in which the logical track address 24 a corresponding to a track decided to be flushed is registered, changes the state flag 25 a in an entry in the WC cluster management table 25 corresponding to an entry with a Valid bit “1” in m×n entries of the way-line bitmap 24 c from Valid to a wait for flush to a NAND, and notifies the logical-NAND-layer managing unit 120 b of an flush request.

On the other hand, the logical-NAND-layer managing unit 120 b checks a state of the MS additional recording IB 11 ab referring to the MS buffer management table 61 of the MS structure management table 60 shown in FIG. 28 and the MS logical block management table 35 shown in FIG. 14. When it is judged from the field 61 b for the MS additional recording IB of the MS buffer management table 61 that the MS additional recording IB 11 ab is already present, the logical-NAND-layer managing unit 120 b acquires information concerning the number of writable tracks for a logical block ID registered in the field 61 b for the MS additional recording IB from the field of the number of valid tracks 35 c of the MS logical block management table 35 and notifies the DRAM-layer managing unit 120 a of the acquired number of writable tracks.

When it is judged from the field 61 b for the MS additional recording IB of the MS buffer management table 61 that the MS additional recording IB 11 ab is not present, the logical-NAND-layer managing unit 120 b issues a request for acquiring the free block FB to the physical-NAND-layer managing unit 120 c and acquires the free block FB together with a logical block ID allocated as the FB. The logical-NAND-layer managing unit 120 b notifies the DRAM-layer managing unit 120 a of the number of writable tracks 2^(i) of the acquired free block FB.

The DRAM-layer managing unit 120 a selects tracks from the WC track management table 24 by the number of writable tracks notified from the logical-NAND-layer managing unit 120 b and judges whether the intra-track sector padding and the passive merge are performed. Here, it is assumed that it is unnecessary to perform the intra-track sector padding. In order to check whether a track to be flushed is present in the NAND memory 10 and find whether the passive merge is performed, the DRAM-layer managing unit 120 a notifies the logical-NAND-layer managing unit 120 b of required information such as a logical track address to be flushed.

When the logical-NAND-layer managing unit 120 b receives this notification, the logical-NAND-layer managing unit 120 b searches through the logical track address 30 a as an index of the track management table 30 and, when necessary, further searches through the FS/IS management table 40, searches whether a logical track identical with the logical track address to be flushed is present on the NAND memory 10 side, and notifies the physical-NAND-layer managing unit 120 c of a result of the search. Consequently, the physical-NAND-layer managing unit 120 c performs flush from the WC 21 to the MS additional recording IB 11 ab involving the passive merge or not involving the passive merge.

When the finish of the flush from the WC 21 to the MS additional recording IB 11 ab is notified from the physical-NAND-layer managing unit 120 c, if a new free block FB is acquired from the physical-NAND-layer managing unit 120 c as the MS additional recording IB 11 ab, the logical-NAND-layer managing unit 120 b sets the Valid flag 35 e of an entry of the MS logical block management table 35 corresponding to a logical block ID of the free block FB given from the physical-NAND-layer managing unit 120 c Valid, registers the logical block ID in the field 61 b for the MS additional recording IB of the MS buffer management table 61, and increments the number of valid logical blocks VBL of the MS structure management table 60.

The logical-NAND-layer managing unit 120 b updates the track management table 30. In other words, the logical-NAND-layer managing unit 120 b registers required information such as the cluster bit map 30 b, the logical block ID 30 c, and the intra-logical block track position 30 d in an entry of the logical track address 30 a corresponding to a track flushed from the WC 21 to the MS additional recording IB 11 ab.

When the passive merge is not performed, as explained above, the logical-NAND-layer managing unit 120 b registered the required information in a corresponding logical track entry of the track management table 30. The logical-NAND-layer managing unit 120 b registers data concerning a new track flushed from the WC 21 in an entry corresponding to a written logical block ID of the MS logical block management table 35. As the registration in the MS logical block management table 35, there are, for example, update of a logical track address (the track management pointer 35 b) as an index of the track management table 30 corresponding to a track stored in an MS logical block, update of the number of valid tracks 35 c, and update of the writable top track 35 d.

When it is assumed that passive merge of the WC 21 and the MS 11 is performed, required information such as the logical block ID 30 c and the intra-logical block track position 30 d in an entry of the logical track address 30 a corresponding to a merge source track in the track management table 30 is updated. Specifically, the logical block ID 30 c is changed from a logical block ID at the time when the logical block ID 30 c is present in the MS 11 to a logical block ID corresponding to the MS additional recording IB 11 ab. The intra-logical block track position 30 d is changed according to a additional recording state.

Moreover, the data managing unit 120 deletes a relevant section of a field of the track management pointer 35 b in an entry corresponding to a logical block at a merge source in the MS logical block management table 35, decrements the number of valid tracks 35 c, and updates the logical block ID list by the number of valid tracks 62 of the MS structure management table 60. When the number of valid tracks 35 c in the entry corresponding to the logical block at the merge source is reduced to 0 by the decrement, the data managing unit 120 decrements the number of valid logical blocks VBL of the MS structure management table 60 and returns this un-writable invalid free block FB to the physical-NAND-layer managing unit 120 c. The data managing unit 120 sets the Valid flag 35 e of an entry corresponding to the returned logical block Invalid. Moreover, in the same manner as explained above, the data managing unit 120 registers data concerning a new track flushed from the WC 21 in the MS logical block management table 35.

When the finish of flush from the WC 21 to the MS additional recording IB 11 ab is notified from the physical-NAND-layer managing unit 120 c, the logical-NAND-layer managing unit 120 b notifies the DRAM-layer managing unit 120 a of the finish of the flush. The DRAM-layer managing unit 120 a receives the notification and sets the state flags 25 a in entries corresponding to all clusters belonging to the flushed track in the WC cluster management table 25 Invalid (usable). Thereafter, writing in the entries is possible. Concerning a list corresponding to the flushed track in the WC track management table 24, for example, the next pointer 24 d of an immediately preceding list is changed or deleted and the list is invalidated.

The CIB processing is explained. When the WCF processing is finished, the CIB processing including processing for moving the data of the FSIB 12 a written by the WCF processing to the FS 12 and processing for moving the data of the MSIB 11 a written by the WCF processing to the MS 11 or the TFS 11 b is executed. A detailed procedure of the CIB processing is explained below with reference to a flowchart shown in FIG. 30.

CIB Processing in the MS Unit 11Q

First, the CIB processing in the first time in the MS unit 11Q explained at step S330 in FIG. 19 is explained in detail. The logical-NAND-layer managing unit 120 b acquires, from a field of the number of valid tracks 35 c of the MS logical block management table 35, information of the number of valid tracks concerning logical block IDs registered in the field 61 a for the MSFB and the field 61 b for the MS additional recording IB of the MS buffer management table 61 of the MS structure management table 60. The logical-NAND-layer managing unit 120 b checks whether one or more full blocks, all tracks of which are written, are present in the MSFB 11 aa or the MS additional recording IB 11 ab of the MSIB 11 a (step S400). When one or more full blocks are present in the MSIB 11 a, the logical-NAND-layer managing unit 120 b performs the processing explained below. When the judgment at step S400 is NO, the procedure shifts to step S440.

When the judgment at step S400 is YES, the logical-NAND-layer managing unit 120 b checks whether an invalid logical block, the number of valid tracks 35 c of which is 0, is present in the MS referring to the number of valid tracks 35 c of the MS logical block management table 35. When the invalid logical block is present in the MS, the logical-NAND-layer managing unit 120 b returns the invalid logical bock to the physical-NAND-layer managing unit 120 c (step S405). In an entry of the MS logical block management table 35 corresponding to the returned invalid logical block, the Valid flag 35 e is set InValid and the number of valid logical blocks VBL of the MS structure management table 60 is decremented. The logical-NAND-layer managing unit 120 b directly moves a full logical block in the MSFB 11 aa to the MS 11 and moves a full logical block in the MS additional recording IB 11 ab the TFS 11 b (step S407). This Move processing is processing for only deleting relevant logical block IDs registered in the field 61 a for the MSFB and the field 61 b for the MS additional recording IB of the MS buffer management table 61 of the MS structure management table 60.

The logical-NAND-layer managing unit 120 b compares the number of valid logical blocks VBL as state information of the MS structure management table 60 with the maximum number of logical blocks MBL (step S410). As a result of the comparison, when the number of valid logical blocks VBL exceeds the maximum number of logical blocks MBL, the logical-NAND-layer managing unit 120 b judges that writable free blocks FB are insufficient, executes MS compaction processing explained below block by block, increases invalid logical blocks that should be returned to the physical-NAND-layer managing unit 120 c entirely configured by invalid tracks, and reduces the number of valid logical blocks VBL to be smaller than the maximum number of blocks MBL (step S420). When writable free blocks FB are not insufficient in the judgment at step S410, the procedure is shifted to step S440.

As the MS compaction processing, as explained above, there are two types, i.e., 2^(i) track MS compaction and less than 2^(i) track MS compaction. In the 2^(i) track MS compaction, the MS compaction buffer 11 c is used. A logical block after the compaction is moved to the top of the TFS 11 b. In the less than 2^(i) track MS compaction, the logical block is copied to the MS additional recording IB 11 ab in track units.

First, the logical-NAND-layer managing unit 120 b executes the 2^(i) track MS compaction for collecting 2^(i) tracks from logical blocks with a small number of valid tracks referring to the logical block ID list by the numbers of valid tracks 62 of the MS structure management table 60 and copying the collected 2^(i) tracks to the MS compaction buffer 11 c acquired from the physical-NAND-layer managing unit 120 c as rewritable free bocks FB.

Specifically, the logical-NAND-layer managing unit 120 b issues an acquisition request for a free block FB to the physical-NAND-layer managing unit 120 c and acquires a free block FB together with a logical block ID allocated as the free bock FB. The logical-NAND-layer managing unit 120 b requests the physical-NAND-layer managing unit 120 c to copy a plurality of tracks selected as compaction objects to the free block FB. When the tracks as the compaction objects have valid clusters in the WC 21, the FS unit 12Q, and the IS unit 13Q, the logical-NAND-layer managing unit 120 b executes the passive merge for merging the valid clusters and collecting the valid clusters in the MS compaction buffer 11 c.

When the finish of the compaction is notified from the physical-NAND-layer managing unit 120 c, the logical-NAND-layer managing unit 120 b updates the logical block ID 30 c in an entry having the logical track addresses 30 a corresponding to the tracks subjected to the compaction of the track management table 30 a to the logical block ID of the free block FB acquired from the physical-NAND-layer managing unit 120 c and updates the intra-logical block track position 30 d.

The logical-NAND-layer managing unit 120 b registers the logical block ID of the free block FB acquired from the physical-NAND-layer managing unit 120 c, which is used as the MS compaction buffer 11 c, as a new entry in the MS logical block management table 35 and registers required information in respective fields in the entry. As the registration, there are update of the track management pointer 35 b, update of the number of valid tracks, update of the writable top track 35 d, and the like.

The data managing unit 120 registers the logical block ID used as the MS compaction buffer 11 c at the top of the FIFO structure (the linked list) of the field 61 c for the TFS of the MS buffer management table 61 of the MS structure management buffer 60 to move the MS compaction buffer 11 c configured by one logical block including the valid 2 i tracks as a result of the MS compaction to the top (an oldest position) of the TFS 11 b. When the TFS 11 b is full, an oldest block at the top is moved to the MS 11.

Subsequently, the data managing unit 120 invalidates old track data at a compaction source in the MS 11. Specifically, the data managing unit 120 deletes a relevant section of a field of the track management pointer 35 b in an entry corresponding to a logical block at the compaction source in the MS logical block management table 35, decrements the number of valid tracks 35 c, and updates the logical block ID list by the number of valid tracks 62 of the MS structure management table 60. When the number of valid tracks 35 c is reduced to 0 by the decrement, the data managing unit 120 decrements the number of valid logical blocks VBL of the MS structure management table 60, and returns this invalid logical block to the physical-NAND-layer managing unit 120 c. The valid flag 35 e of an entry of the MS logical block management table 35 corresponding to the returned logical block is set Invalid.

When such compaction processing and processing for returning the invalid logical block FB are finished, the logical-NAND-layer managing unit 120 b compares the number of valid logical blocks VBL and the maximum number of logical blocks MBL. When the number of valid logical blocks VBL exceeds the maximum number of logical blocks MBL, the logical-NAND-layer managing unit 120 b executes the 2^(i) track MS compaction for collecting 2^(i) valid tracks again. When the 2^(i) track MS compaction for collecting 2^(i) valid tracks is impossible in a state in which the number of valid logical blocks VBL exceeds the maximum number of logical blocks MBL, the logical-NAND-layer managing unit 120 b executes the less than 2^(i) track MS compaction.

In the less than 2i track MS compaction, the logical-NAND-layer managing unit 120 b copies tracks in a number less than the 2i tracks as the compaction objects to the MS additional recording IB flab to generates an invalid logical block formed by the invalid 2i tracks. The logical-NAND-layer managing unit 120 b returns the generated invalid logical block to the physical-NAND-layer managing unit 120 c to reduce the number of valid logical blocks VBL. Explanation of update of the management tables for the less than 2i track MS compaction is omitted.

CIB Processing in the FS 12

The CIB processing in the FS 12 explained at step S340 in FIG. 19 is explained in detail. The logical-NAND-layer managing unit 120 b acquires information of the number of valid clusters concerning the logical block IDs registered in the field 66 a for the FSFB and the field 66 b for the FS additional recording IB of the FS input buffer management table 66 of the FS/IS structure management table 65 from a field of the number of valid clusters 42 d of the FS/IS logical block management table 32. The logical-NAND-layer managing unit 120 b checks whether one or more full logical blocks, in which all pages (all clusters) are written, are present in the FSFB 12 aa or the FS additional recording IB 12 ab of the FSIB 12 a (step S440). When one or more full logical blocks are present in the FSIB 12 a, the logical-NAND-layer managing unit 120 b performs the processing explained below. When the judgment at step S440 is NO, the procedure is finished here.

When the judgment at step S440 is YES, the logical-NAND-layer managing unit 120 b checks whether an invalid logical block, the number of valid clusters 42 d of which is 0, is present in the FS unit 12Q referring to the number of valid clusters 42 d of the FS/IS structure management table 65 and the FS/IS logical block management table 42. When the invalid logical block is present in the FS unit 12Q, the logical-NAND-layer managing unit 120 b returns the invalid logical block to the physical-NAND-layer managing unit 120 c (step S445).

An entry of the returned logical block is deleted from the MS logical block management table 35 and the FS/IS logical block management table 42. The logical-NAND-layer managing unit 120 b moves a full logical block in the FSFB 12 aa to the FS 12 and moves a full logical block in the FS additional recording IB 12 ab to the FS 12 (step S447). Specifically, the Move processing is processing for only deleting relevant logical block IDs registered in the field 66 a for the FSFB and the field 66 b for the FS additional recording IB of the FS input buffer management table 66 of the FS/IS structure management table 65.

The logical-NAND-layer managing unit 120 b judges whether the number of logical blocks of the FS 12 having the FIFO structure exceeds a predetermined maximum number of logical blocks BLfsmax allowed for the FS 12 (step S450). Specifically, the logical-NAND-layer managing unit 120 b judges whether the number of logical blocks calculated from the FSFIFO management table 67 exceeds the maximum number of logical blocks BLfsmax set in advance.

As a result of this comparison, when the calculated number of logical blocks exceeds the maximum number of logical blocks BLfsmax, the logical-NAND-layer managing unit 120 b judges that writable free blocks FB are insufficient. The logical-NAND-layer managing unit 120 b executes flush processing for, for example, two logical blocks at a time to the MS 11 (step S460) and flush processing for one logical block to the IS 13 (step S500) according to a state at that point. When the FS 12 is not full in the judgment at step S450, the logical-NAND-layer managing unit 120 b finishes the processing here without performing flush processing from the FS 12 to the MSIB 11 a and flush processing from the FS 12 to the ISIB 13 a.

In the flush processing from the FS 12 to the MSIB 11 a, first, the logical-NAND-layer managing unit 120 b judges whether there is a logical block directly moved to the MSIB 11 a without being moved through the IS unit 13Q from the FS 12 (step S455). Specifically, the logical-NAND-layer managing unit 120 b checks clusters in an oldest logical block at the top of the FIFO of the FS 12 in order one by one and searches how many valid clusters a track to which the clusters belong has in the FS unit 12Q referring to a field of the number of FS clusters 31 f of the track management table 30. When the number of valid clusters in the track is equal to or larger than a predetermined threshold (e.g., 2^(k−i−1)), the logical-NAND-layer managing unit 120 b sets the logical track as a track decided to be flushed to the MSIB 11 a.

The search is performed through a route explained below.

1. The logical-NAND-layer managing unit 120 b obtains an oldest FS/IS block ID at the top of the FIFO from the FSFIFO management table 65 of the FS/IS structure management table 65.

2. The logical-NAND-layer managing unit 120 b obtains an index to the intra-FS/IS cluster management table 44 from a field of the intra-block cluster table 42 c in an entry of the FS/IS logical block management table 42 corresponding to the FS/IS block ID.

3. The logical-NAND-layer managing unit 120 b obtains one pointer to the FS/IS management table 40 from each entry in one logical block designated by the index obtained in the intra-FS/IS cluster management table 44 and jumps to a relevant link of the FS/IS management table 40.

4. The logical-NAND-layer managing unit 120 b obtains a relevant logical track address to which the link at a jump destination belongs.

5. The logical-NAND-layer managing unit 120 b checks a field of the number of FS clusters 30 f in a relevant entry of the track management table 30 using the obtained logical track address.

6. The logical-NAND-layer managing unit 120 b repeats 3 to 5 explained above.

The flush from the FS 12 to the MS 11 is performed for, for example, two logical blocks at a time. In other words, the logical-NAND-layer managing unit 120 b collects tracks having the number of intra-track valid clusters equal to or larger than a predetermined threshold (e.g., 2k−i−1) for two logical blocks and flushes the collected tracks for two logical blocks to the MSFB 11 aa of the MSIB 11 a (step S460). In the flush, concerning clusters not present in the FS 12 in the flushed track, the logical-NAND-layer managing unit 120 b executes the passive merge for reading out the clusters from the WC 21, the IS unit 13Q, and the MS 11 and merging the clusters.

However, when tracks decided to be flushed to the MSIB 11 a are not present for two logical blocks, the logical-NAND-layer managing unit 120 b flushes one logical block to the MSFB 11 aa of the MSIB 11 a and additionally records and writes tracks not enough for one logical block in the MS additional recording IB 11 ab in track units (step S460). Similarly, when tracks decided to be flushed to the MSIB 11 a are not present for one logical block, the logical-NAND-layer managing unit 120 b additionally records and writes tracks not enough for one logical block in the MS additional recording IB 11 ab in track units (step S460). Thereafter, when no valid cluster is left in the top logical block of the FS 12 of the FIFO structure, the logical-NAND-layer managing unit 120 b returns the top logical block to the physical-NAND-layer managing unit 120 c as an invalid logical block.

CIB Processing in the MS 11 (Step S350 in FIG. 19)

When the flush from the FS to the MSIB 11 a is performed in this way, the CIB processing in the MS unit 11Q is again executed (step S480). The CIB processing in the MS unit 11Q at step S480 is the same as the CIB processing in the first time in the MS unit 11Q (steps S400 to S420). Therefore, redundant explanation is omitted. After the CIB processing in the MS unit 11Q, the logical-NAND-layer managing unit 120 b checks in the same manner as explained above whether a condition for flush from the FS 12 to the MSIB 11 a is satisfied (step S455). When the flush condition is satisfied, the flush of two logical blocks from the FS 12 to the MSIB 11 a and the CIB processing in the MS 11 explained above is again executed. Such processing is repeated until the judgment NO is obtained at step S455.

CIB Processing in the FS 12

When the judgment at step S455 is NO, the logical-NAND-layer managing unit 120 b judges whether a condition for flush from the FS 12 to the ISIB 13 a is satisfied (step S490). Specifically, in the flush processing from the FS 12 to the MSIB 11 a, when a valid cluster is left in the checked top logical block of the FS 12 in a full state having the FIFO structure, the logical-NAND-layer managing unit 120 b executes flush from the FS 12 to the ISIB 13 a assuming that condition for flush from the FS 12 to the IS 13 at step S490 is satisfied.

When the condition is satisfied at step S490, the logical-NAND-layer managing unit 120 b moves the top logical block including only clusters not included in the track flushed to the MSIB 11 a to the ISIB 13 a (step S500). At step S500, the logical-NAND-layer managing unit 120 b executes, for example, flush of one logical block. Depending on a state, thereafter, after performing the procedure at steps S520 to S585, the logical-NAND-layer managing unit 120 b may perform the flush from the FS 12 to the ISIB 13 a at step S500 again according to the judgment at step S590.

A state in which the flush is performed again at step S500 is a state in which, for example, when a buffer (the FSFB 12 a or the FS additional recording IB 12 ab) having a plurality of full logical blocks is present in the FSIB 12 a, if the FS 12 having the FIFO structure is full, flush of a plurality of blocks from the FS 12 to the MSIB 11 a or the ISIB 13 a is performed according to the move of a full block from the FSIB 12 a to the FS 12. Under such a condition, it is likely that flush of a plurality of logical blocks from the FS 12 to the ISIB 13 a is performed.

CIB Processing in the IS (Step S360 in FIG. 19)

Details of flush processing and compaction processing performed in the IS 13 when the condition at step S490 is satisfied are explained with reference to, besides FIG. 30, a flowchart shown in FIG. 31. First, in the same manner as explained above, the logical-NAND-layer managing unit 120 b checks whether an invalid logical block is present in the IS unit 13Q and, when an invalid logical block is present in the IS unit 13Q, returns the invalid logical block to the physical-NAND-layer managing unit 120 c (step S520). In entries of the MS logical block management table 35 and the FS/IS logical block management table 42 corresponding to an entry of the returned logical block, the Valid flags 35 e and 42 f are set Invalid.

The logical-NAND-layer managing unit 120 b judges whether the number of logical blocks of the IS 13 having the FIFO structure exceeds the predetermined maximum number of logical blocks BLismax allowed for the IS 13 (step S530). Specifically, the logical-NAND-layer managing unit 120 b judges whether the number of logical blocks calculated from the ISFIFO management table 69 exceeds the maximum number of logical blocks BLismax set in advance.

As a result of the comparison, when the calculated number of logical blocks exceeds the maximum number of logical blocks BLismax, the logical-NAND-layer managing unit 120 b judges that writable free blocks FB are insufficient and flushes tracks for, for example, two logical blocks from the IS 13 to the MSFB 11 aa of the MSIB 11 a (step S540). When the IS 13 is not full in the judgment at step S530, the logical-NAND-layer managing unit 120 b moves a full logical block in the ISIS 13 a to the IS 13 b without performing flush processing to the MSIB 11 a (step S585).

In the flush at step S540, the logical-NAND-layer managing unit 120 b executes processing for selecting a track to be flushed shown in FIG. 31 using the track management table 30 or the like shown in FIG. 12. In FIG. 31, the logical-NAND-layer managing unit 120 b starts the selection processing (cyclic search processing; hereinafter simply referred to as search processing) (step S700). The logical-NAND-layer managing unit 120 b starts a search from the next logical track address of the logical track address 30 a as an index of the track management table 30 stored at step S740 as a final searched track in the last search (step S710).

When the search is a search for the first time (a first cycle), the logical-NAND-layer managing unit 120 b starts the search from a first entry of the track management table 30 (step S710). When the searched track stored at step S740 is a final entry (a track n in FIG. 12) of the track management table 30, in the next track search at step S710, the logical-NAND-layer managing unit 120 b returns to the top entry (a track 0 in FIG. 12).

In this search, referring to a field (the number of valid clusters in a relevant logical track) of the number of IS clusters 30 g in the entry of the track management table 30, when a valid cluster is stored in the enter IS 13, the logical-NAND-layer managing unit 120 b registers a logical track address of the entry in a not-shown newly searched track list (step S720). The logical-NAND-layer managing unit 120 b compares the number of tracks registered in the newly searched track list with a predetermined threshold L. When the number of registered track is smaller than the threshold L, the logical-NAND-layer managing unit 120 b shifts the procedure to step S710 and checks the next entry of the track management table 30 in the same manner as explained above.

By repeating such processing, the logical-NAND-layer managing unit 120 b registers logical track addresses for the threshold L in the newly searched track list (“Yes” at step S730). The logical-NAND-layer managing unit 120 b stores an entry (an index) of the track management table 30 corresponding to a logical track addresses registered in the newly searched track list last as a searched last track and finishes the search in the present cycle (step S740).

The logical-NAND-layer managing unit 120 b judges whether there is an unselected track list in which logical tracks not selected last time (not shown) are listed (step S750). In the case of the first cycle, because the unselected track list is not present, the logical-NAND-layer managing unit 120 b selects 2^(i+1) logical tracks based on two lists, i.e., the newly searched track list and newly added intra-block track list (not shown) (step S760). The newly added intra-block track list is a list concerning tracks included in the block (entered in the IS input buffer management table 68 of the FS/IS structure management table 65) flushed from the FS 12 to the IS unit 13Q at step S500 in FIG. 30.

In the first cycle, the logical-NAND-layer managing unit 120 b selects 2¹⁺¹ tracks as flush candidates using such two lists. In the selection, as explained above, a selection reference (score value) S obtained by using the number of valid clusters in tracks and a valid cluster coefficient is used.

Score value S=the number of valid clusters in tracks×valid cluster coefficient

The valid cluster coefficient is a number weighted according to whether a track is present in a logical block in which an invalid track is present in the MS unit 11Q. The number is larger when the track is present than when the track is not present.

The number of valid clusters can be acquired by looking at a field of the number of IS clusters 30 g of the track management table 30. The valid cluster coefficient can be acquired by looking at a field of the number of valid tracks 35 c of the MS logical block management table 35 linked to the track management table 30 by a field of the track management pointer 35 b.

The logical-NAND-layer managing unit 120 b selects M (a predetermined set value) tracks with larger score values S from a plurality of tracks included in the newly added intra-block track list. The logical-NAND-layer managing unit 120 b adds L tracks registered in the newly searched track list by the prior search to the selected M tracks and selects 2^(i+1) tracks with higher score values S from the L+M tracks as tracks to be flushed to the MS 11. The logical-NAND-layer managing unit 120 b registers tracks other than the selected 2^(i+1) tracks among the L+M tracks in the unselected track list.

In a second or subsequent cycle, the logical-NAND-layer managing unit 120 b selects 2^(i+1) tracks based on three lists, i.e., the unselected track list, the newly searched track list, and the newly added intra-block track list (step S770). It is determined according to judgment at step S570 in FIG. 30 explained later whether flush for a second or subsequent time should be performed. In the selection processing using the three lists, the logical-NAND-layer managing unit 120 b selects N (a predetermined set value) tracks with higher score values S from a plurality of tracks included in the unselected track list, selects M (a predetermined set value) tracks with higher score values S from a plurality of tracks included in the newly added intra-block track list, adds L tracks registered in the newly searched track list obtained in the present second or subsequent cycle to the N+M tracks, and selects 2¹⁺¹ tracks with higher score values S out of the L+M+N tracks as tracks to be flushed to the MS 11. The logical-NAND-layer managing unit 120 b registers tracks other than the selected 2¹⁺¹ tracks among the L+M+N logical tracks in the unselected track list used in the next cycle.

Referring back to step S540 in FIG. 30, when the extraction candidates of the tracks for two logical blocks are selected as explained above, the logical-NAND-layer managing unit 120 b flushes the selected tracks for two logical blocks (i.e., 2^(i+1) tracks) to the MSFB 11 aa of the MSIB 11 a (step S540). In the flush, concerning clusters not present in the IS unit 13Q among the tracks to be flushed, the passive merge for reading out the clusters from the WC 21, the FS unit 12, and the MS 11 and merging the clusters is executed. In the above description, the tracks to be flushed are selected according to the score value S based on the number of valid clusters and the coefficient indicating whether porous blocks are present in the MS. However, tracks to be flushed may be selected according to only the number of valid clusters.

CIB Processing in the MS (Step S370 in FIG. 19)

When the flush from the IS 13 to the MSIB 11 a is performed in this way, the CIB processing in the MS 11 is again executed (step S560). The CIB processing in the MS 11 at step S560 is the same as the CIB processing in the MS 11 in the first time (steps S400 to S420). Therefore, redundant explanation is omitted.

CIB Processing in the IS

The logical-NAND-layer managing unit 120 b judges whether flush from the IS 13 to the MSIB 11 a should be executed again (step S570). The logical-NAND-layer managing unit 120 b sorts, using fields of the MS logical block management table 35 and the number of valid clusters 42 d of the FS/IS logical block management table 42 and the like, logical blocks in the IS 13 after the flush at step S540 in order from one with a smallest number of valid clusters. When a total number of valid clusters of two logical blocks with a smallest number of valid clusters is equal to or larger than 2^(k) (for one logical block), which is a predetermined set value, the logical-NAND-layer managing unit 120 b judges that a condition for flush from the IS 13 to the MSIB 11 a is satisfied (step S570).

When the condition for flush from the IS 13 to the MSIB 11 a is satisfied, the logical-NAND-layer managing unit 120 b shifts the procedure to step S540 and executes steps S700 to 5750 and 5770 in FIG. 31 to execute the flush processing for two logical blocks explained above again. As long as the judgment at step S570 is YES, the logical-NAND-layer managing unit 120 b repeatedly executes the flush processing for two logical blocks from the IS 13 to the MSIB 11 a and the CIB processing in the MS 11. When the judgment at step S570 is NO, the logical-NAND-layer managing unit 120 b executes the compaction processing in the IS 13 (step S580).

In the IS compaction processing, the logical-NAND-layer managing unit 120 b collects, using fields of the MS logical block management table 35 and the number of valid clusters 42 d of the FS/IS logical block management table 42 and the like, clusters for one logical block in order from a logical block having a smallest number of valid clusters in the IS unit 13Q, i.e., 2^(k) clusters and copies the 2^(k) clusters to the IS compaction buffer 13 c. When this copy processing is finished, the logical-NAND-layer managing unit 120 b returns logical blocks without valid clusters among the logical blocks at a compaction source (a Copy source) to the physical-NAND-layer managing unit 120 c as invalid logical blocks. The logical-NAND-layer managing unit 120 b moves the IS compaction buffer 13 c configured by logical blocks filled with valid clusters by the compaction processing to the IS 13.

After this compaction, full logical blocks in the ISIB 13 a is moved to the IS 13 (step S585). Specifically, this Move processing is processing for only deleting a relevant logical block ID registered in the field for the ISIB of the IS input buffer management table 68 of the FS/IS structure management table 65.

Thereafter, the logical-NAND-layer managing unit 120 b judges whether the condition for flush from the FS 12 to the ISIB 13 a is satisfied (step S590). When the condition for flush from the FS 12 to the ISIB 13 a is satisfied, the logical-NAND-layer managing unit 120 b shifts the procedure to step S500 and repeats the procedure again. After the IS compaction processing is finished, when it is judged that the condition for flush from the FS 12 to the ISIB 13 a is not satisfied, the logical-NAND-layer managing unit 120 b finishes the present write processing. The above is the details of the write processing.

As explained above, in this embodiment, the FSIB 12 a functioning as an input buffer is arranged at the pre-stage of the FS 12, the ISIB 13 a functioning as an input buffer is arranged at the pre-stage of the IS 13, and the MSIB 11 a functioning as an input buffer is arranged at the pre-stage of the MS 11. The write processing is divided into the two stages of the WCF processing for performing the processing for data flush from the WC 21 to the FSIB 12 a or the MSIB 11 a and the CIB processing including the flush from the FSIB 12 a to the FS 12, the flush from the ISIB 13 a to the IS 13, the flush from the MSIB 11 a to the MS 11, the flush from the FS 12 to the ISIB 13 a, the flush from the IS 13 to the MSIB 11 a, the MS compaction, and the IS compaction. In other words, the input buffers (the FSIB 12 a, the ISIB 13 a, and the MSIB 11 a) are provided and a writing stage is divided into the two stages of the write processing (the WCF processing) from the WC 21 to the NAND memory 10 and the data movement processing (the CIB processing) in the NAND memory by the input buffers. Consequently, even when the data movement processing (the CIB processing) in the NAND memory takes time, it is possible to immediately executed the write processing (the WCF processing) from the WC 21 to the NAND memory 10 without a delay. It is possible to guarantee latency of the write processing from the WC 21 to the NAND memory 10.

Because the writing state is divided into such two stages, it is easy to pipeline and execute the WCF processing and the CIB processing in parallel. When the WCF processing and the CIB processing are execute in parallel, it is possible to conceal processing time of the CIB processing from the host apparatus side and further increase the speed of the write processing.

According to the present invention, it is possible to provide a memory system that can reduce processing time for data flush from a cache memory to a flash memory.

The present invention is not limited to the embodiments described above. Accordingly, various modifications can be made without departing from the scope of the present invention.

Furthermore, the embodiments described above includes various constituents with inventive step. That is, various modifications of the present invention can be made by distributing or integrating any arbitrary disclosed constituents.

For example, various modifications of the present invention can be made by omitting any arbitrary constituents from among all constituents disclosed in the embodiments as long as problem to be solved by the invention can be resolved and advantages to be attained by the invention can be attained.

Furthermore, it is explained in the above embodiments that a cluster size multiplied by a positive integer equal to or larger than two equals to a logical page size. However, the present invention is not to be thus limited.

For example, the cluster size can be the same as the logical page size, or can be the size obtained by multiplying the logical page size by a positive integer equal to or larger than two by combining a plurality of logical pages.

Moreover, the cluster size can be the same as a unit of management for a file system of OS (Operating System) that runs on the host apparatus 1 such as a personal computer.

Furthermore, it is explained in the above embodiments that a track size multiplied by a positive integer equal to or larger than two equals to a logical block size. However, the present invention is not to be thus limited.

For example, the track size can be the same as the logical block size, or can be the size obtained by multiplying the logical block size by a positive integer equal to or larger than two by combining a plurality of logical blocks.

If the track size is equal to or larger than the logical block size, MS compaction processing is not necessary. Therefore, the TFS 11 b can be omitted. 

1-39. (canceled)
 40. A memory system comprising: a first storing area as a cache memory included in a volatile semiconductor memory; second and third storing areas included in nonvolatile semiconductor memories in which data reading and writing is performed by a page unit and data erasing is performed by a block unit twice or larger natural number times as large as the page unit; a first input buffer included in the nonvolatile semiconductor memories and configured to perform buffering between the first storing area and the second storing area; a second input buffer included in the nonvolatile semiconductor memories and configured to perform buffering between the first storing area and the third storing area; and a controller that allocates storage areas of the nonvolatile semiconductor memories to the second and third storing areas and the first and second input buffers by a logical block unit associated with one or more blocks, wherein the controller executes: first processing for writing a plurality of data in a sector unit in the first storing area; second processing for flushing the data written in the first storing area to the first input buffer as data in a first management unit twice or larger natural number times as large as the sector unit; third processing for flushing the data written in the first storing area to the second input buffer as data in a second management unit twice or larger natural number times as large as the first management unit; fourth processing for relocating, to the second storing area, a logical block that is allocated to the first input buffer and in which the data in the first management unit is stored; fifth processing for relocating, to the third storing area, a logical block that is allocated to the second input buffer and in which the data in the second management unit is stored; and sixth processing for flushing a plurality of data stored in the second storing area to the second input buffer as data in the second management unit.
 41. The memory system according to claim 40, wherein the controller completes, when receiving a flush request, processing of the flush request at a stage when the controller flushes the data written in the first storing area to at least one of the first and second input buffers by executing at least one of the second and third processing.
 42. The memory system according to claim 41, wherein the controller can perform, even during continuation of the fourth to sixth processing, the processing of the flush request by executing at least one of the second and third processing.
 43. The memory system according to claim 40, wherein the controller completes, when receiving a writing request and when data flushing from the first storing area is necessary, processing of the writing request at a stage when input data associated with the writing request is written in the first storing area by executing the first processing after flushing the data written in the first storing area to at least one of the first and second input buffers by executing at least one of the second and third processing.
 44. The memory system according to claim 43, wherein the controller can perform, even during continuation of the fourth to sixth processing, the processing of the writing request by executing at least one of the first to third processing.
 45. The memory system according to claim 40, wherein the controller executes the sixth processing when a number of logical blocks allocated to the second storing area exceeds a tolerance.
 46. The memory system according to claim 40, wherein the controller invalidates data in the second storing area having the same logical address as updated data written in the first input buffer.
 47. The memory system according to claim 40, wherein the controller invalidates data in the second and third storing areas having the same logical address as updated data written in the second input buffer.
 48. The memory system according to claim 40, wherein the controller executes at least one of the second and third processing when a number of data in the second management unit to which the data in the first storing area belongs exceeds a specified value.
 49. The memory system according to claim 40, wherein the volatile semiconductor memory is a DRAM, and the nonvolatile semiconductor memory is a NAND-type flash memory.
 50. A memory system comprising: a first storing area as a cache memory included in a volatile semiconductor memory; second and third storing areas included in nonvolatile semiconductor memories in which data reading and writing is performed by a page unit and data erasing is performed by a block unit twice or larger natural number times as large as the page unit; a first pre-stage buffer included in the nonvolatile semiconductor memories and configured to separately store data with a high update frequency for the second storing area; a first input buffer included in the nonvolatile semiconductor memories and configured to perform buffering between the first storing area and the first pre-stage buffer; a second input buffer included in the nonvolatile semiconductor memories and configured to perform buffering between the first storing area and the third storing area; and a controller that allocates storage areas of the nonvolatile semiconductor memories to the second and third storing areas, the first pre-stage buffer, and the first and second input buffers by a logical block unit associated with one or more blocks, wherein the controller executes: first processing for writing a plurality of data in a sector unit in the first storing area; second processing for flushing the data stored in the first storing area to the first input buffer as data in a first management unit twice or larger natural number times as large as the sector unit; third processing for flushing the data stored in the first storing area to the second input buffer as data in a second management unit twice or larger natural number times as large as the first management unit; fourth processing for relocating, to the first pre-stage buffer, a logical block that is allocated to the first input buffer and in which the data in the first management unit is stored; fifth processing for relocating, to the third storing area, a logical block that is allocated to the second input buffer and in which the data in the second management unit is stored; sixth processing for flushing a plurality of data stored in the second storing area to the second input buffer as data in the second management unit; seventh processing for selecting a plurality of valid data in the first management unit stored in the second storing area and rewriting the valid data in a new logical block; and eighth processing for relocating a logical block allocated to the first pre-stage buffer to the second storing area.
 51. The memory system according to claim 50, wherein the controller completes, when receiving a flush request, processing of the flush request at a stage when the controller flushes the data written in the first storing area to at least one of the first and second input buffers by executing at least one of the second and third processing.
 52. The memory system according to claim 51, wherein the controller can perform, even during continuation of the fourth to eighth processing, the processing of the flush request by executing at least one of the second and third processing.
 53. The memory system according to claim 50, wherein the controller completes, when receiving a writing request and when data flushing from the first storing area is necessary, processing of the writing request at a stage when input data associated with the writing request is written in the first storing area by executing the first processing after flushing the data written in the first storing area to at least one of the first and second input buffers by executing at least one of the second and third processing.
 54. The memory system according to claim 53, wherein the controller can perform, even during continuation of the fourth to eighth processing, the processing of the writing request by executing at least one of the first to third processing.
 55. The memory system according to claim 50, wherein the controller executes at least one of the sixth and seventh processing when a number of logical blocks allocated to the second storing area exceeds a tolerance.
 56. The memory system according to claim 50, wherein the controller allocates the new logical block filled with the valid data to the second storing area in performing the seventh processing.
 57. The memory system according to claim 50, wherein the controller manages the first pre-stage buffer as FIFO structure in the logical block unit.
 58. The memory system according to claim 57, wherein the controller invalidates data in the first pre-stage buffer and the second storing area having the same logical address as updated data written in the first input buffer.
 59. The memory system according to claim 57, wherein the controller invalidates data in the first pre-stage buffer and the second and third storing areas having the same logical address as updated data written in the second input buffer.
 60. The memory system according to claim 57, wherein the controller executes ninth processing for flushing data in a logical block registered earliest in the first pre-stage buffer to the second input buffer as data in the second management unit.
 61. The memory system according to claim 60, wherein the controller executes the ninth processing when a number of logical blocks allocated to the first pre-stage buffer exceeds a tolerance.
 62. The memory system according to claim 60, wherein the controller executes, after executing the ninth processing, the eighth processing for the logical block that is registered earliest in the first pre-stage buffer and in which valid data remains.
 63. The memory system according to claim 60, wherein the controller executes at least one of the second and third processing when a number of data in the second management unit to which the data in the first storing area belongs exceeds a specified value.
 64. The memory system according to claim 60, wherein a size of the first management unit is smaller than the block unit.
 65. The memory system according to claim 60, wherein the volatile semiconductor memory is a DRAM, and the nonvolatile semiconductor memory is a NAND-type flash memory.
 66. A memory system comprising: a first storing area as a cache memory included in a volatile semiconductor memory; second and third storing areas included in nonvolatile semiconductor memories in which data reading and writing is performed by a page unit and data erasing is performed by a block unit twice or larger natural number times as large as the page unit; a first pre-stage buffer included in the nonvolatile semiconductor memories and configured to separately store data with a high update frequency for the second storing area; a second pre-stage buffer included in the nonvolatile semiconductor memories and configured to separately store data with a high update frequency for the third storing area; a first input buffer included in the nonvolatile semiconductor memories and configured to perform buffering between the first storing area and the first pre-stage buffer; a second input buffer included in the nonvolatile semiconductor memories and configured to perform buffering between the first storing area and the second pre-stage buffer; and a controller that allocates storage areas of the nonvolatile semiconductor memories to the second and third storing areas, the first and second pre-stage buffers, and the first and second input buffers by a logical block unit associated with one or more blocks, wherein the controller executes: first processing for writing a plurality of data in a sector unit in the first storing area; second processing for flushing the data stored in the first storing area to the first input buffer as data in a first management unit twice or larger natural number times as large as the sector unit; third processing for flushing the data stored in the first storing area to the second input buffer as data in a second management unit twice or larger natural number times as large as the first management unit; fourth processing for relocating, to the first pre-stage buffer, a logical block that is allocated to the first input buffer and in which the data in the first management unit is stored; fifth processing for relocating, to the second pre-stage buffer, a logical block that is allocated to the second input buffer and in which the data in the second management unit is stored; sixth processing for flushing a plurality of data stored in the second storing area to the second input buffer as data in the second management unit; seventh processing for selecting a plurality of valid data in the first management unit stored in the second storing area and rewriting the valid data in a new logical block; eighth processing for relocating a logical block allocated to the first pre-stage buffer to the second storing area; ninth processing for selecting a plurality of valid data in the second management unit stored in the third storing area and rewriting the valid data in a new logical block; and tenth processing for relocating a logical block allocated to the second pre-stage buffer to the third storing area.
 67. The memory system according to claim 66, wherein the controller completes, when receiving a flush request, processing of the flush request at a stage when the controller flushes the data written in the first storing area to at least one of the first and second input buffers by executing at least one of the second and third processing.
 68. The memory system according to claim 67, wherein the controller can perform, even during continuation of the fourth to tenth processing, the processing of the flush request by executing at least one of the second and third processing.
 69. The memory system according to claim 66, wherein the controller completes, when receiving a writing request and when data flushing from the first storing area is necessary, processing of the writing request at a stage when input data associated with the writing request is written in the first storing area by executing the first processing after flushing the data written in the first storing area to at least one of the first and second input buffers by executing at least one of the second and third processing.
 70. The memory system according to claim 69, wherein the controller can perform, even during continuation of the fourth to tenth processing, the processing of the writing request by executing at least one of the first to third processing.
 71. The memory system according to claim 66, wherein the controller executes at least one of the sixth and seventh processing when a number of logical blocks allocated to the second storing area exceeds a tolerance.
 72. The memory system according to claim 66, wherein the controller allocates the new logical block filled with the valid data to the second storing area in performing the seventh processing.
 73. The memory system according to claim 66, wherein the controller executes the ninth processing when a number of logical blocks allocated to the third storing area exceeds a tolerance.
 74. The memory system according to claim 66, wherein the controller allocates the new logical block filled with the valid data to the second pre-stage buffer in performing the ninth processing.
 75. The memory system according to claim 66, wherein the controller manages the first pre-stage buffer as FIFO structure in the logical block unit.
 76. The memory system according to claim 75, wherein the controller manages the second pre-stage buffer as FIFO structure in the logical block unit.
 77. The memory system according to claim 75, wherein the controller invalidates data in the first pre-stage buffer and the second storing area having the same logical address as updated data written in the first input buffer.
 78. The memory system according to claim 76, wherein the controller invalidates data in the first and second pre-stage buffers and the second and third storing areas having the same logical address as updated data written in the second input buffer.
 79. The memory system according to claim 75, wherein the controller executes eleventh processing for flushing data in a logical block registered earliest in the first pre-stage buffer to the second input buffer as data in the second management unit.
 80. The memory system according to claim 79, wherein the controller executes the eleventh processing when a number of logical blocks allocated to the first pre-stage buffer exceeds a tolerance.
 81. The memory system according to claim 80, wherein the controller executes, after executing the eleventh processing, the eighth processing for the logical block that is registered earliest in the first pre-stage buffer and in which valid data remains.
 82. The memory system according to claim 76, wherein the controller executes the tenth processing when a number of logical blocks allocated to the second pre-stage buffer exceeds a tolerance.
 83. The memory system according to claim 82, wherein the controller executes the tenth processing for the logical block registered earliest in the second pre-stage buffer.
 84. The memory system according to claim 66, wherein the controller executes at least one of the second and third processing when a number of data in the second management unit to which the data in the first storing area belongs exceeds a specified value.
 85. The memory system according to claim 66, wherein a size of the second management unit is smaller than the block unit.
 86. The memory system according to claim 66, wherein the volatile semiconductor memory is a DRAM, and the nonvolatile semiconductor memory is a NAND-type flash memory. 